Herman Maes

TL;DR: In this article, strong polarity dependent charge trapping effects have been observed in as-deposited SiO2/Al2O3 gate stacks with TiN gate electrodes on n- and p-type Si substrates using current voltage and capacitance voltage measurements.

TL;DR: In this article, direct and post-injection trap generation, induced by low-temperature (∼77 K) hot-electron injection, has been studied, where the main degradation mechanism attributed to the release, migration, and subsequent reaction of a hydrogenic species is inoperative, not only due to the suppressed release but also to the freeze-out of the species motion.

TL;DR: In this article, a straightforward methodology is presented to distinguish the presence of large amounts of interface traps causing weak Fermi-level pinning from other effects in MOS capacitors based on GaAs or other alternative semiconductors.

TL;DR: In this article, a large field shift and a constriction in the hysteresis loops of Pb(Zr,Ti)O3 thin film capacitors with various Zr/Ti ratios were studied as a function of the annealing temperature after patterning the top sputter-deposited Pt electrode using reactive ion etch with Ar gas.

TL;DR: In this article, a split-gate flash EEPROM cell that relies on enhanced hot-electron injection onto the floating gate for fast 5 V-only programming is presented.