H
Herman Maes
Researcher at Katholieke Universiteit Leuven
Publications - 310
Citations - 10763
Herman Maes is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon & Field-effect transistor. The author has an hindex of 47, co-authored 310 publications receiving 10503 citations. Previous affiliations of Herman Maes include Siemens & Alcatel-Lucent.
Papers
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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)—Does the Dielectric Quality Matter?
Lionel Trojman,Luigi Pantisano,Morin Dehan,Isabelle Ferain,Simone Severi,Herman Maes,Guido Groeseneken +6 more
TL;DR: In this paper, the authors investigated low and high-field transports (velocity and mobility) in 1-nm-EOT high-kappa materials on Si (100) and (110) down to cryogenic temperature.
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A review of recent work on stresses and strains in semiconductor heterostructures
TL;DR: In this paper, the authors discuss the work on strain and critical thickness of large area lattice mismatched epilayers of GeSi, InGaAs and II-VI semiconductors.
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Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation
TL;DR: In this paper, electron diffraction contrast imaging (EDCI) computations for strain characterization on the nanometer scale are presented using newly developed simulation software for EDCI image interpretation, which can be used in the characterization, with submicron resolution, of localized strain fields in any crystalline material.
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High‐temperature H2 anneal of interface defects in electron‐beam‐irradiated MNOS structures
TL;DR: In this article, a thermal anneal technique is proposed to remove electron beam irradiation damage in metal-nitride-oxide semiconductor structures, where the SiO2 layer is impregnated with hydrogen after the nitride deposition.
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Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon
M.-A. Trauwaert,Jan Vanhellemont,Herman Maes,A.-M. Van Bavel,Guido Langouche,Andre Stesmans,Paul Clauws +6 more
TL;DR: The influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon is studied by deep level transient spectroscopy (DLTS) correlated with photoluminescence (PL) analyses as mentioned in this paper.