J
J. Bielefeld
Researcher at Intel
Publications - 2
Citations - 380
J. Bielefeld is an academic researcher from Intel. The author has contributed to research in topics: NMOS logic & PMOS logic. The author has an hindex of 2, co-authored 2 publications receiving 377 citations.
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Proceedings ArticleDOI
A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 /spl mu/m/sup 2/ SRAM cell
Scott E. Thompson,Nidhi Anand,Mark Armstrong,C. Auth,B. Arcot,Mohsen Alavi,P. Bai,J. Bielefeld,Robert M. Bigwood,J. Brandenburg,M. Buehler,Stephen M. Cea,V. Chikarmane,C. H. Choi,R. Frankovic,Tahir Ghani,G. Glass,W. Han,Thomas Hoffmann,Makarem A. Hussein,P. Jacob,Ajay Jain,Chia-Hong Jan,Subhash M. Joshi,C. Kenyon,Jason Klaus,S. Klopcic,J. Luce,Z. Ma,B. McIntyre,Kaizad Mistry,Anand Portland Murthy,P. Nguyen,H. Pearson,T. Sandford,R. Schweinfurth,R. Shaheed,Swaminathan Sivakumar,M. Taylor,B. Tufts,Charles H. Wallace,P.-H. Wang,Cory E. Weber,Mark T. Bohr +43 more
TL;DR: In this paper, a leading edge 90 nm technology with 1.2 nm physical gate oxide, 50 nm gate length, strained silicon, NiSi, 7 layers of Cu interconnects, and low k carbon-doped oxide (CDO) for high performance dense logic is presented.
Proceedings ArticleDOI
100 nm gate length high performance/low power CMOS transistor structure
Tahir Ghani,S. Ahmed,P. Aminzadeh,J. Bielefeld,P. Charvat,C. Chu,Michael K. Harper,P. Jacob,Chia-Hong Jan,Jack Portland Kavalieros,C. Kenyon,Ramune Nagisetty,Paul A. Packan,J. Sebastian,M. Taylor,J. Tsai,S. Tyagi,Simon Yang,M. Bohr +18 more
TL;DR: In this paper, the authors report a very high performance 100 nm gate length CMOS transistor structure operating at 1.2-1.5 V and 3 nA/m I/sub OFF.