J
James K. Gillespie
Researcher at Air Force Research Laboratory
Publications - 67
Citations - 1699
James K. Gillespie is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 23, co-authored 67 publications receiving 1504 citations. Previous affiliations of James K. Gillespie include Wright-Patterson Air Force Base.
Papers
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Journal ArticleDOI
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
Gregg H. Jessen,Robert C. Fitch,James K. Gillespie,Glen D. Via,Antonio Crespo,D. Langley,D.J. Denninghoff,M. Trejo,Eric R. Heller +8 more
TL;DR: In this paper, an empirically based physical model is presented to predict the expected extrinsic fT for many combinations of gate length and commonly used barrier layer thickness (tbar) on silicon nitride passivated T-gated AlGaN/GaN HEMTs.
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AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
R. Mehandru,B. Luo,Jihyun Kim,Fan Ren,Brent P. Gila,A. H. Onstine,C. R. Abernathy,Steve Pearton,David Gotthold,R. Birkhahn,B. Peres,Robert C. Fitch,James K. Gillespie,T.J. Jenkins,J. Sewell,D. Via,Antonio Crespo +16 more
TL;DR: In this paper, the authors demonstrated that Sc2O3 thin films deposited by plasma assisted molecular-beam epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs).
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High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
Antonio Crespo,M.M. Bellot,Kelson D. Chabak,James K. Gillespie,Gregg H. Jessen,V. Miller,M. Trejo,Glen D. Via,D.E. Walker,B.W. Winningham,H. E. Smith,T.A. Cooper,X. Gao,Shiping Guo +13 more
TL;DR: In this article, the first CW Ka-band RF power measurements at 35 GHz from a passivated Al0.82In0.18N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier were reported.
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Wet Chemical Digital Etching of GaAs at Room Temperature
Gregory C. DeSalvo,Christopher A. Bozada,John L. Ebel,David C. Look,J. Barrette,Charles Cerny,Ross W. Dettmer,James K. Gillespie,Charles K. Havasy,T. Jenkins,Kenichi Nakano,C. Pettiford,Tony Quach,James S. Sewell,G. David Via +14 more
TL;DR: In this paper, a two-stage digital etching technique for GaAs is presented, which uses hydrogen peroxide and an acid in a two step etching process to remove GaAs in approximately 15 A increments.
Journal ArticleDOI
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
Kelson D. Chabak,James K. Gillespie,V. Miller,Antonio Crespo,J.A. Roussos,M. Trejo,Dennis E. Walker,Glen D. Via,Gregg H. Jessen,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +13 more
TL;DR: In this paper, the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs) on free-standing chemical-vapor-deposited (CVD) diamond substrate wafers were reported.