Journal ArticleDOI
High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
Antonio Crespo,M.M. Bellot,Kelson D. Chabak,James K. Gillespie,Gregg H. Jessen,V. Miller,M. Trejo,Glen D. Via,D.E. Walker,B.W. Winningham,H. E. Smith,T.A. Cooper,X. Gao,Shiping Guo +13 more
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TLDR
In this article, the first CW Ka-band RF power measurements at 35 GHz from a passivated Al0.82In0.18N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier were reported.Abstract:
We report the first CW Ka-band radio-frequency (RF) power measurements at 35 GHz from a passivated Al0.82In0.18N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier. This device delivered a maximum of 5.8 W/mm with a power-added efficiency of 43.6% biased at VDS = 20 V and 10% IDSS when matched for power at CW. The device was grown by metal-organic chemical vapor deposition with 2.8-?m source-drain spacing and a gate length of 160 nm. An excellent ohmic contact was obtained with an Rc of 0.62 ?·mm. The maximum extrinsic transconductance was 354 mS/mm with an IDSS of 1197 mA/mm at a VGS of 0 V, an ft of 79 GHz, and an fmax of 113.8 GHz.read more
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Journal ArticleDOI
N-polar GaN epitaxy and high electron mobility transistors
Man Hoi Wong,Stacia Keller,Sansaptak Dasgupta Nidhi,Daniel J Denninghoff,Seshadri Kolluri,David F. Brown,Jing Lu,Nicholas Fichtenbaum,Elaheh Ahmadi,Uttam Singisetti,Alessandro Chini,Siddharth Rajan,Steven P. DenBaars,James S. Speck,Umesh Mishra +14 more
TL;DR: In this article, the progress of N-polar (Al, In, Ga)N materials for Npolar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition.
Journal ArticleDOI
210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation
Ronghua Wang,Guowang Li,Oleg Laboutin,Yu Cao,Wayne Johnson,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +8 more
TL;DR: In this article, a dielectric-free passivation (DFP) process was applied to the access region of a GaN-based high-electron mobility transistors (HEMTs) for the first time.
Journal ArticleDOI
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
Ronghua Wang,Guowang Li,Jai Verma,Berardi Sensale-Rodriguez,Tian Fang,Jia Guo,Zongyang Hu,Oleg Laboutin,Yu Cao,Wayne Johnson,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Xing +13 more
TL;DR: In this paper, the state-of-the-art depletion mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In0.13Al0.04 N/AlN/GaN heterostructure on SiC substrate were fabricated.
Journal ArticleDOI
ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
Andrew J. Green,James K. Gillespie,Robert C. Fitch,Dennis E. Walker,Miles Lindquist,Antonio Crespo,Dan Brooks,Edward Beam,Andy Xie,Vipan Kumar,Jose L. Jimenez,C. Lee,Yu Cao,Kelson D. Chabak,Gregg H. Jessen +14 more
TL;DR: In this article, the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs) was reported and the extrinsic small-signal gain was measured as a function of drain bias and gate length.
Journal ArticleDOI
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
TL;DR: In this paper, a 3 nm AlN/GaN HEMT technology for millimeter-wave applications is presented, which achieves state-of-the-art performance at 40 GHz and 94 GHz.
References
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Journal ArticleDOI
30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
Journal ArticleDOI
Power electronics on InAlN/(In)GaN: Prospect for a record performance
TL;DR: In this article, the authors compared basic physical parameters of Al/sub 0.2/Ga/sub0.8/N-GaN quantum well with InAlN/(In)GaN HEMTs.
Journal ArticleDOI
High-power AlGaN/GaN HEMTs for Ka-band applications
Tomas Palacios,Arpan Chakraborty,Siddharth Rajan,Christiane Poblenz,Stacia Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +7 more
TL;DR: In this paper, the authors report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD).
Journal ArticleDOI
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Raphaël Butté,J.-F. Carlin,Eric Feltin,M. Gonschorek,Sylvain Nicolay,Gabriel Christmann,D. Simeonov,A. Castiglia,J. Dorsaz,H. J. Buehlmann,Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Mauro Mosca,Mauro Mosca,C. Pinquier,C. Pinquier,M. A. Py,F. Demangeot,J. Frandon,Pavlos G. Lagoudakis,Jeremy J. Baumberg,Nicolas Grandjean +22 more
TL;DR: In this paper, the structural and optical properties of lattice-matching AlInN layers to GaN have been investigated and their specific use to realize nearly strain-free structures for photonic and electronic applications has been discussed.
Journal ArticleDOI
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
Gregg H. Jessen,Robert C. Fitch,James K. Gillespie,Glen D. Via,Antonio Crespo,D. Langley,D.J. Denninghoff,M. Trejo,Eric R. Heller +8 more
TL;DR: In this paper, an empirically based physical model is presented to predict the expected extrinsic fT for many combinations of gate length and commonly used barrier layer thickness (tbar) on silicon nitride passivated T-gated AlGaN/GaN HEMTs.