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Jérémie Grisolia

Researcher at University of Toulouse

Publications -  69
Citations -  1314

Jérémie Grisolia is an academic researcher from University of Toulouse. The author has contributed to research in topics: Ion implantation & Silicon. The author has an hindex of 17, co-authored 67 publications receiving 1241 citations. Previous affiliations of Jérémie Grisolia include Intelligence and National Security Alliance & Institut national des sciences appliquées.

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High-Sensitivity Strain Gauge Based on a Single Wire of Gold Nanoparticles Fabricated by Stop-and-Go Convective Self-Assembly

TL;DR: The high sensitivity, repeatability, and robustness demonstrated by these single-wire strain gauges make them extremely promising for integration into micro-electromechanical systems or for high-resolution strain mapping.
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The generic nature of SmartCut process for thin film transfer

TL;DR: In this paper, a specific case of thermally-induced splitting is investigated, where the splitting kinetics are controlled by hydrogen diffusion. And the latest results concerning new structures are presented.
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A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si

TL;DR: In this paper, the authors used transmission electron microscopy (TEM) to quantitatively study the thermal behavior of cavities and found that the cavities grow in size, reduce their density, while the overall volume they occupy remains constant.
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Monolayered Wires of Gold Colloidal Nanoparticles for High-Sensitivity Strain Sensing

TL;DR: In this paper, high-sensitivity resistive strain gauges based on electron tunneling in assemblies of gold colloidal nanoparticles are fabricated and characterized using convective self-assembly (CSA) on flexible polyethylene terephtalate substrates.
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Formation energies and relative stability of perfect and faulted dislocation loops in silicon

TL;DR: In this paper, a series of transmission electron microscopy experiments has been designed to study the influence of the ion dose, the annealing ambient and the proximity of a free surface on the evolution of both types of loops.