Journal ArticleDOI
A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si
TLDR
In this paper, the authors used transmission electron microscopy (TEM) to quantitatively study the thermal behavior of cavities and found that the cavities grow in size, reduce their density, while the overall volume they occupy remains constant.Abstract:
Proton implantation and thermal annealing of silicon result in the formation of a specific type of extended defects involving hydrogen, named “platelets” or “cavities.” These defects have been related to the exfoliation mechanism on which a newly developed process to transfer thin films of silicon onto various substrates is based. The density and the size of these platelets depend on the implantation and annealing conditions. In this letter, rigorous statistical methods based on transmission electron microscopy have been used to quantitatively study the thermal behavior of these defects. Upon annealing, it is shown that the cavities grow in size, reduce their density, while the overall volume they occupy remains constant. This phenomenon is due to a conservative ripening of the cavities. The transfer of hydrogen atoms from small to large cavities leads to a decrease of the elastic energy within the implanted layer while the strain locally increases around the projected range of the protons.read more
Citations
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Journal ArticleDOI
Frontiers of silicon-on-insulator
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
Journal ArticleDOI
The generic nature of SmartCut process for thin film transfer
B. Aspar,Hubert Moriceau,E. Jalaguier,C. Lagahe,A. Soubie,Beatrice Biasse,A. M. Papon,Alain Claverie,Jérémie Grisolia,Gérard Benassayag,Fabrice Letertre,O. Rayssac,T. Barge,Christophe Maleville,Bruno Ghyselen +14 more
TL;DR: In this paper, a specific case of thermally-induced splitting is investigated, where the splitting kinetics are controlled by hydrogen diffusion. And the latest results concerning new structures are presented.
Journal ArticleDOI
Hydrogen blistering of silicon: Progress in fundamental understanding
TL;DR: A review of the most relevant experimental facts and their conformity with the data assessed can be found in this paper, where an attempt is made to identify the key questions and suggest a few avenues for future work.
Journal ArticleDOI
Mechanics of Smart-Cut ® technology
Xi-Qiao Feng,Yonggang Huang +1 more
TL;DR: In this paper, a model for defect nucleation induced by hydrogen ion implantation is established based on the continuum mechanics theory accounting for the crystal structure of silicon, which is used to provide an upper bound on the implantation dose of hydrogen ions, one of the most important process parameter in the Smart-Cut technology.
Journal ArticleDOI
Orientation dependence of blistering in H-implanted Si
Y. Zheng,S. S. Lau,T. Höchbauer,Amit Misra,R.D. Verda,X.-M. He,Michael Nastasi,James W. Mayer +7 more
TL;DR: In this article, the orientation effect on the blistering phenomenon in H implanted Si wafers was studied for (100), (111), and (110) Si wafer, and it was found that substrate orientation has no observable effects on the underlying blistering mechanisms.
References
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Journal ArticleDOI
Silicon on insulator material technology
TL;DR: In this article, a silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen.
Journal ArticleDOI
Application of hydrogen ion beams to Silicon On Insulator material technology
TL;DR: In this article, a new application for proton ion beams in the field of Silicon On Insulator material (SOI) technology is reported, based on hydrophillic wafer bonding and referred to as Smart-Cut, heat treatment induces an in-depth micro-slicing of one of two bonded wafers previously implanted with hydrogen.
Journal ArticleDOI
On the mechanism of the hydrogen-induced exfoliation of silicon
M. K. Weldon,V. E. Marsico,Yves J. Chabal,A. Agarwal,D. J. Eaglesham,J. Sapjeta,W. L. Brown,D. C. Jacobson,Yves Caudano,S. B. Christman,E. E. Chaban +10 more
TL;DR: In this paper, the fundamental mechanism underlying hydrogen-induced exfoliation of silicon, using a combination of spectroscopic and microscopic techniques, was investigated, and the evolution of the internal defect structure as a function of implanted hydrogen concentration and annealing temperature was studied.
Journal ArticleDOI
Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
TL;DR: In this paper, an effective activation energy was determined for the formation of optically detectable surface blisters from the time required to form such blisters at various temperatures, and the measured effective activation energies are close to the respective bond energies in all four materials.
Journal ArticleDOI
Ostwald ripening of end-of-range defects in silicon
TL;DR: In this article, the authors show that the mean radius of the dislocation loops increases with time while their density decreases through the exchange of Si self-interstitial atoms between the loops, while the number of interstitials stored in the loops stays constant.