J
Jong Hyun Ahn
Researcher at Yonsei University
Publications - 320
Citations - 44695
Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.
Papers
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Journal ArticleDOI
2 μm solid-state laser mode-locked by single-layer graphene
Alexander A. Lagatsky,Zhipei Sun,Tero S. Kulmala,R. S. Sundaram,Silvia Milana,Felice Torrisi,Oleg L. Antipov,Young-Ze Lee,Jong Hyun Ahn,Christian T. A. Brown,Wilson Sibbett,Andrea C. Ferrari +11 more
TL;DR: In this article, a 2'μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generates transform-limited ∼410'fs pulses, with a spectral width ∼11.1'nm at 2067'nm.
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Complementary Logic Gates and Ring Oscillators on Plastic Substrates by Use of Printed Ribbons of Single-Crystalline Silicon
Dae-Hyeong Kim,Jong Hyun Ahn,Hoon-Sik Kim,Keon Jae Lee,Tae-Ho Kim,Chang-Jae Yu,Chang-Jae Yu,Ralph G. Nuzzo,John A. Rogers +8 more
TL;DR: In this article, a CMOS inverter and three-stage ring oscillator were formed on flexible plastic substrates by transfer printing of p-type and n-type single crystalline ribbons of silicon.
Journal ArticleDOI
Bendable integrated circuits on plastic substrates by use of printed ribbons of single-crystalline silicon
Jong Hyun Ahn,Hoon Kim,Etienne Menard,Keon Jae Lee,Zhengtao Zhu,Zhengtao Zhu,Dae-Hyeong Kim,Ralph G. Nuzzo,John A. Rogers,Islamshah Amlani,Vadim Kushner,Shawn G. Thomas,Terrisa Duenas +12 more
TL;DR: In this paper, the authors present studies of several simple integrated circuits (n-channel metal-oxide semiconductor inverters, five-stage ring oscillators, and differential amplifiers) formed on thin, bendable plastic substrates with printed ribbons of ultrathin single-crystalline silicon as the semiconductor.
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Bendable GaN high electron mobility transistors on plastic substrates
Keon Jae Lee,Matthew Meitl,Jong Hyun Ahn,John A. Rogers,Ralph G. Nuzzo,Vipan Kumar,Ilesanmi Adesida +6 more
TL;DR: In this article, a procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described, using a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaN∕GaN single crystalline microstructures.
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Stretchable Active Matrix Inorganic Light-Emitting Diode Display Enabled by Overlay-Aligned Roll-Transfer Printing
Minwoo Choi,Bongkyun Jang,Wonho Lee,Seonwoo Lee,Tae Woong Kim,Hak-Joo Lee,Jae-Hyun Kim,Jong Hyun Ahn +7 more
TL;DR: In this article, an active matrix-type stretchable display is realized by overlay-aligned transfer of inorganic light-emitting diode (LED) and single-crystal Si thin film transistor (TFT) with roll processes.