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Jong Hyun Ahn

Researcher at Yonsei University

Publications -  320
Citations -  44695

Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.

Papers
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Shifting of surface plasmon resonance due to electromagnetic coupling between graphene and Au nanoparticles

TL;DR: Shifting of the surface plasmon resonance wavelength induced by the variation of the thickness of insulating spacer between single layer graphene and Au nanoparticles is studied and the result agrees qualitatively well with the plAsmon ruler equation.
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Boosting ion dynamics through superwettable leaf-like film based on porous g-C 3 N 4 nanosheets for ionogel supercapacitors

TL;DR: In this article, a superwettable supercapacitor with porous g-C3N4 nanosheets as ion-accessible channels has been developed, which shows favorable electrochemical kinetic behavior in ionic liquid electrolyte.
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A 6.5- μ W 10-kHz BW 80.4-dB SNDR G m -C-Based CT ∆∑ Modulator With a Feedback-Assisted G m Linearization for Artifact-Tolerant Neural Recording

TL;DR: The feedback-assisted G-sub m-based continuous-time delta–sigma modulator (CTDSM) is presented, which achieves a high input impedance, 300-mVpp linear input range, 80.4-dB signal-to-noise and distortion ratio (SNDR), 81-dB dynamic range (DR), and 76-dB common-mode rejection ratio (CMRR) and consumes only 6.5 kHz.
Patent

Roll-to-roll doping method of graphene film, and doped graphene film

TL;DR: The present disclosure relates to roll-to-roll doping method of graphene film, and doped graphene film as mentioned in this paper, and it is related to roll to roll doping of graphene films.
Journal ArticleDOI

Efficient Direct Reduction of Graphene Oxide by Silicon Substrate.

TL;DR: This study reports a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry, and uses silicon nanosheets (SiNSs) as reducing agents for GO.