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Jong Hyun Ahn

Researcher at Yonsei University

Publications -  320
Citations -  44695

Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.

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Graphene induced tunability of the surface plasmon resonance

TL;DR: In this article, the authors demonstrated the tunability of surface plasmon resonance wavelength by varying the thickness of Al2O3 spacer layer inserted between the graphene and nanoparticles.
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Organic solar cells using CVD-grown graphene electrodes.

TL;DR: It is determined that three-layer graphene (3LG) represents the best configuration for obtaining the optimal power conversion efficiency (PCE) in OSC anode of an OSC, even at suboptimal sheet resistances.
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Graphene based field effect transistors: Efforts made towards flexible electronics

TL;DR: This article reviews the recent development of graphene based FETs including the fabrication and active layers material compatibility in flexible format.
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Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

TL;DR: In this paper, a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates was reported, which demonstrated ultra-lowvoltage operation of graphene field effect transistors within ± 1 V with maximum doping exceeding 1013 cm−2 and on-off ratios larger than 10 times.
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Reduced Water Vapor Transmission Rate of Graphene Gas Barrier Films for Flexible Organic Field-Effect Transistors.

TL;DR: The measurement of the water vapor transmission rate (WVTR) through the 6-layer 10 × 10 cm(2) large-area graphene films synthesized by chemical vapor deposition (CVD) showed that the graphene-passivated organic field-effect transistors (OFETs) exhibited excellent environmental stability as well as a prolonged lifetime even after 500 bending cycles with strain of 2.3%.