Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

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Technology of Flexible Semiconductor/Memory Device

Promyelocytic leukemia (PML) is a major component of macromolecular multiprotein complexes called PML nuclear-bodies (PML-NBs). These PML-NBs recruit numerous proteins including CBP, p53 and HIPK2 in response to DNA damage, senescence and apoptosis. In this study, we investigated the effect of presenilin (PS), the main component of the γ-secretase complex, in PML/p53 expression and downstream consequences during DNA damage-induced cell death using camptothecin (CPT). We found that the loss of PS in PS knockout (KO) MEFs (mouse embryonic fibroblasts) results in severely blunted PML expression and attenuated cell death upon CPT exposure, a phenotype that is fully reversed by re-expression of PS1 in PS KO cells and recapitulated by γ-secretase inhibitors in hPS1 MEFs. Interestingly, the γ-secretase cleavage product, APP intracellular domain (AICD), together with Fe65-induced PML expression at the protein and transcriptional levels in PS KO cells. PML and p53 reciprocally positively regulated each other during CPT-induced DNA damage, both of which were dependent on PS. Finally, elevated levels of PML-NB, PML protein and PML mRNA were detected in the brain tissues from Alzheimer's disease (AD) patients, where γ-secretase activity is essential for pathogenesis. Our data provide for the first time, a critical role of the PS/AICD-PML/p53 pathway in DNA damage-induced apoptosis, and implicate this pathway in AD pathogenesis.

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Critical role of presenilin-dependent γ -secretase activity in DNA damage-induced promyelocytic leukemia protein expression and apoptosis

Method of manufacturing graphene and graphene manufactured by the method

The present invention provides a method for preparing graphene by providing a reaction gas including a carbon source and heat onto a substrate, and reacting the same to form a graphene on the substrate, a graphene sheet formed by the method, and a device using the same.

Method for preparing graphene, graphene sheet, and device using same

The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single-crystal-transferred-silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on–off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.

http://iopscience.iop.org/article/10.1143/JJAP.49.05EA01/pdf

Jong Hyun Ahn

Papers

Technology of Flexible Semiconductor/Memory Device

Critical role of presenilin-dependent γ -secretase activity in DNA damage-induced promyelocytic leukemia protein expression and apoptosis

Method of manufacturing graphene and graphene manufactured by the method

Method for preparing graphene, graphene sheet, and device using same

Low Temperature Aluminum Oxide Gate Dielectric on Plastic Film for Flexible Device Application