Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.

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Low-Voltage Tunnel Transistors for Beyond CMOS Logic

A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

System comprising a semiconductor device and structure

A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.

Semiconductor device and structure

A method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a first metal layer overlaying the first transistors and providing at least one connection to the first transistors, then processing a second metal layer overlaying the first metal layer, then processing a second layer of second transistors overlaying the second metal layer, wherein the second metal layer is connected to provide power to at least one of the second transistors.

Method for fabrication of a semiconductor device and structure

https://cyberleninka.org/article/n/1380904.pdf

ASAP7: A 7-nm finFET predictive process design kit

A leading edge 32nm high-k/metal gate transistor technology has been optimized for SoC platform applications that span a wide range of power, performance, and feature space. This technology has been developed to be modular, offering mix-and-match transistors, interconnects, RF/analog passive elements, embedded memory, and noise mitigation options. The low gate leakage of the high-k gate dielectric enables the triple transistor architecture to support ultra low power, high performance, and high voltage tolerant I/O devices concurrently. Embedded memories include high density (0.148 um2) and low voltage (0.171 um2) SRAMs as well as secure OTP fuses. Analog/RF SoC features include high precision, high quality passives (resistors, capacitors and inductors) and deep-nwell noise isolation.

https://www.intel.com/content/dam/doc/technology-brief/32nm-soc-platform-technology-paper.pdf

A 32nm SoC platform technology with 2 nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product applications

L. McGill

Papers

A 32nm SoC platform technology with 2 nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product applications