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Ludvik Martinu

Researcher at École Polytechnique de Montréal

Publications -  314
Citations -  9653

Ludvik Martinu is an academic researcher from École Polytechnique de Montréal. The author has contributed to research in topics: Thin film & Microstructure. The author has an hindex of 48, co-authored 313 publications receiving 8645 citations. Previous affiliations of Ludvik Martinu include Heinrich Hertz Institute & École Polytechnique.

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Investigation of refractive index modifications in CW CO2 laser written planar optical waveguides

TL;DR: In this paper, a reflectance method is used to assess the refractive index distribution n ( x,y ) in these structures as it is a key parameter determining the propagation properties of guided wave devices.
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Adhesion of CVD diamond films on silicon substrates of different crystallographic orientations

TL;DR: In this paper, the authors examined Si substrates with three different crystallographic orientations at various stages of the diamond deposition process and found that the initial ultrasonic scratching treatment produces partial graphitization of diamond powder, and it controls the crystallite size through the carbon residues.
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In situ IR ellipsometry study of the adhesion and growth of plasma deposited silica thin films on stainless steel substrates

TL;DR: In this paper, the adhesion and growth of a-SiO 2 films on stainless steel substrate were studied and the adherence, measured by the microscratch test, was shown to be enhanced by N 2, NH 3 and O 2 plasma treatments prior to deposition of SiO 2.
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Dynamics of HiPIMS Discharge Operated in Oxygen

TL;DR: In this paper, the authors report on time and species-resolved plasma imaging analysis of high-power impulse magnetron sputtering discharge operated above a Cr target in pure oxygen.
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Diamond nucleation enhancement by hydrofluoric acid etching of silicon substrate

TL;DR: In this paper, the authors investigated the effect of silicon substrate pretreatment by hydrofluoric acid (HF) on diamond nucleation and found that the Si surface termination by H and F atoms after HF etching is a thermodynamically favorable configuration to initiate the nucleation process.