M
Mohamed I. Elmasry
Researcher at University of Waterloo
Publications - 337
Citations - 5522
Mohamed I. Elmasry is an academic researcher from University of Waterloo. The author has contributed to research in topics: CMOS & Logic gate. The author has an hindex of 38, co-authored 336 publications receiving 5394 citations.
Papers
More filters
Proceedings ArticleDOI
A low power design approach for MOS current mode logic
Ayman Ismail,Mohamed I. Elmasry +1 more
TL;DR: In this paper, a closed form expression for the propagation delay of MOS current mode logic (MCML) is derived using simplified BSIM transistor equations, which can serve as the basis for an automated methodology to size power efficient MCML gates.
Proceedings ArticleDOI
Low-power register-exchange Viterbi decoder for high-speed wireless communications
D.A.F. Ei-Dib,Mohamed I. Elmasry +1 more
TL;DR: A new implementation for the Viterbi (1967) decoder (VD) based on the register-exchange (RE) method is described, which shows an average power reduction of 45 percent and uses the 'pointer' concept; a pointer is assigned to each register.
Proceedings ArticleDOI
A low-power direct digital frequency synthesizer architecture for wireless communications
TL;DR: A novel low-power direct digital frequency synthesizer (DDFS) architecture is presented, which features 60 dBc spectral purity, 48 Hz frequency resolution, with only 9.5 mW (@30 MHz, 3.3 V) power dissipation.
Journal ArticleDOI
Functional modeling of integrated injection logic—DC analysis
TL;DR: In this paper, an analysis of integrated injection logic structures is performed and the analysis is bared on partitioning the basic I2L structure into injection and n-p-n transistor regions.
Journal ArticleDOI
Impact of technology scaling and process variations on RF CMOS devices
TL;DR: The impact of technology scaling on the RF properties of CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies.