▪ Abstract Solution phase syntheses and size-selective separation methods to prepare semiconductor and metal nanocrystals, tunable in size from ∼1 to 20 nm and monodisperse to ≤5%, are presented. Preparation of monodisperse samples enables systematic characterization of the structural, electronic, and optical properties of materials as they evolve from molecular to bulk in the nanometer size range. Sample uniformity makes it possible to manipulate nanocrystals into close-packed, glassy, and ordered nanocrystal assemblies (superlattices, colloidal crystals, supercrystals). Rigorous structural characterization is critical to understanding the electronic and optical properties of both nanocrystals and their assemblies. At inter-particle separations 5–100 A, dipole-dipole interactions lead to energy transfer between neighboring nanocrystals, and electronic tunneling between proximal nanocrystals gives rise to dark and photoconductivity. At separations <5 A, exchange interactions cause otherwise insulating ass...

Synthesis and Characterization of Monodisperse Nanocrystals and Close-Packed Nanocrystal Assemblies

The semiconductor industry has seen a remarkable miniaturization trend, driven by many scientific and technological innovations. But if this trend is to continue, and provide ever faster and cheaper computers, the size of microelectronic circuit components will soon need to reach the scale of atoms or molecules—a goal that will require conceptually new device structures. The idea that a few molecules, or even a single molecule, could be embedded between electrodes and perform the basic functions of digital electronics—rectification, amplification and storage—was first put forward in the mid-1970s. The concept is now realized for individual components, but the economic fabrication of complete circuits at the molecular level remains challenging because of the difficulty of connecting molecules to one another. A possible solution to this problem is ‘mono-molecular’ electronics, in which a single molecule will integrate the elementary functions and interconnections required for computation.

Electronics using hybrid-molecular and mono-molecular devices

The term 'photonics' describes a technology whereby data transmission and processing occurs largely or entirely by means of photons. Photonic crystals are microstructured materials in which the dielectric constant is periodically modulated on a length scale comparable to the desired wavelength of operation. Multiple interference between waves scattered from each unit cell of the structure may open a 'photonic bandgap'--a range of frequencies, analogous to the electronic bandgap of a semiconductor, within which no propagating electromagnetic modes exist. Numerous device principles that exploit this property have been identified. Considerable progress has now been made in constructing two-dimensional structures using conventional lithography, but the fabrication of three-dimensional photonic crystal structures for the visible spectrum remains a considerable challenge. Here we describe a technique--three-dimensional holographic lithography--that is well suited to the production of three-dimensional structures with sub-micrometre periodicity. With this technique we have made microperiodic polymeric structures, and we have used these as templates to create complementary structures with higher refractive-index contrast.

Fabrication of photonic crystals for the visible spectrum by holographic lithography

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A field-effect transistor has been fabricated from polymer materials by printing techniques. The device characteristics, which show high current output, are insensitive to mechanical treatments such as bending or twisting. This all-organic flexible device, realized with mild techniques, opens the way for large-area, low-cost plastic electronics.

https://science.sciencemag.org/content/sci/265/5179/1684.full.pdf

All-polymer field-effect transistor realized by printing techniques

This article describes a new negative‐tone photoresist, SU‐8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near‐ultraviolet lithography in a 200‐μm‐thick layer. The use of this resist for building tall micromechanical structures by deep silicon reactive‐ion etching and electroplating is demonstrated. Using SU‐8 stencils, etched depths of ≳200 μm in Si and electroplated 130‐μm‐thick Au structures with near‐vertical sidewalls have been achieved.

Micromachining applications of a high resolution ultrathick photoresist

Current drive enhancements were demonstrated in the strained-Si PMOSFETs with sub-100 nm physical gate lengths for the first time, as well as in the NMOSFETs with well-controlled threshold voltage V/sub T/ and overlap capacitance C/sub OV/ characteristics for L/sub poly/ and L/sub eff/ below 80 nm and 60 nm. A 110% enhancement in the electron mobility was observed in the strained Si devices with 1.2% tensile strain (28% Ge content in the relaxed SiGe buffer), along with a 45% increase in the peak hole mobility.

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

A flash-memory device has been fabricated and demonstrated at room temperature by coupling a self-aligned, sub-50-nm quantum dot to the channel of a transistor on a silicon-on-insulator (SOI) substrate. Large threshold voltage shifts of up to 0.75 V are obtained for small erase/write voltages (13 V) at room temperature. At 90 K, evidence of single electron storage is observed. The small size of this device is attractive for achieving high packing densities, while the relatively large output current (100 nA-/spl mu/A's), low off-state current (10 pA), and simple fabrication, requiring only minor variations in standard processing, make it suitable for integration with current silicon memory and logic technology.

Room temperature operation of a quantum-dot flash memory

In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of /spl sim/10/sup 4/.

Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

Lithography with an array of miniaturized scanning electron‐beam columns presents one of the most promising high‐throughput possibilities for fabrication of devices with feature sizes less than 100 nm. With scanning electron beams no mask is required and the necessary resolution and alignment of overlay structures are realizable. With arrays of microcolumns, the lithography throughput of a single column can be multiplied. The approach can also be used for a number of lithography related applications such as metrology, inspection, testing, etc. We review the status of the microcolumn program and discuss opportunities and challenges of this approach to high‐throughput nanolithography and related applications. Special emphasis is given to lithography in the 100 nm regime.

Kam-Leung Lee

Papers

Micromachining applications of a high resolution ultrathick photoresist

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

Room temperature operation of a quantum-dot flash memory

Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

Electron‐beam microcolumns for lithography and related applications