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Indranil Chatterjee
Researcher at University of Bristol
Publications - 41
Citations - 809
Indranil Chatterjee is an academic researcher from University of Bristol. The author has contributed to research in topics: Soft error & Leakage (electronics). The author has an hindex of 14, co-authored 41 publications receiving 673 citations. Previous affiliations of Indranil Chatterjee include Vanderbilt University & Airbus Defence and Space.
Papers
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Journal ArticleDOI
“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs
Michael J. Uren,Serge Karboyan,Indranil Chatterjee,Alexander Pooth,Peter Moens,Abhishek Banerjee,Martin Kuball +6 more
TL;DR: In this article, the authors identify the causes of dynamic dispersion using substrate bias ramps to isolate the leakage paths and trapping locations in the epitaxy and simulation to identify their impact on the device characteristics.
Proceedings ArticleDOI
Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Peter Moens,A. Banerjee,Michael J. Uren,Matteo Meneghini,Serge Karboyan,Indranil Chatterjee,Piet Vanmeerbeek,M. Casar,Charlie Liu,Ali Salih,Enrico Zanoni,Gaudenzio Meneghesso,Martin Kuball,Marnix Tack +13 more
TL;DR: In this article, the role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated.
Journal ArticleDOI
Impact of Technology Scaling on SRAM Soft Error Rates
Indranil Chatterjee,Balaji Narasimham,N. N. Mahatme,N. N. Mahatme,Bharat L. Bhuva,Robert A. Reed,Ronald D. Schrimpf,J. K. Wang,Narayana Rao Vedula,B. Bartz,Carl Monzel +10 more
TL;DR: In this paper, the authors compared the heavy-ion induced upset cross-section in 28, 40, and 65 nm dual-well and triple-well SRAMs over a wide range of particle LETs.
Journal ArticleDOI
Geometry Dependence of Total-Dose Effects in Bulk FinFETs
Indranil Chatterjee,En Xia Zhang,Bharat L. Bhuva,Robert A. Reed,Michael L. Alles,N. N. Mahatme,Dennis R. Ball,Ronald D. Schrimpf,Daniel M. Fleetwood,Dimitri Linten,Eddy Simoen,Jerome Mitard,Cor Claeys +12 more
TL;DR: In this article, the total ionizing dose (TID) response of bulk FinFETs was investigated for various geometry variations, such as fin width, channel length, and fin pitch.
Proceedings ArticleDOI
Impact of technology scaling on the combinational logic soft error rate
N. N. Mahatme,N. J. Gaspard,T. R. Assis,S. Jagannathan,Indranil Chatterjee,T. D. Loveless,Bharat L. Bhuva,Lloyd W. Massengill,S.-J. Wen,Rick Wong +9 more
TL;DR: Experimental results from alpha particle irradiation of 40-nm, 28-nm and 20-nm bulk technology circuits operating in the GHz range suggest that the combinational logic soft error rate (SER) per logic gate decreases with scaling, but the rate of decrease for the logic SER with scaling is not as high as that of the latch SER.