R
Raphael Clerc
Researcher at Jean Monnet University
Publications - 124
Citations - 1551
Raphael Clerc is an academic researcher from Jean Monnet University. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 20, co-authored 115 publications receiving 1405 citations. Previous affiliations of Raphael Clerc include Grenoble Institute of Technology & École nationale supérieure d'électronique et de radioélectricité de Grenoble.
Papers
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Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
TL;DR: Pretet et al. as discussed by the authors investigated the super-coupling effect in fully depleted SOI devices and revealed new challenges in the characterization of ultra-thin devices, such as gate oxide tunneling, thin buried oxide, and ultra thin films.
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Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs
A. Tsormpatzoglou,Charalabos A. Dimitriadis,Raphael Clerc,Quentin Rafhay,G. Pananakakis,Gerard Ghibaudo +5 more
TL;DR: In this paper, a simple analytical expression of the 2D potential distribution along the channel of silicon symmetrical double-gate (DG) MOSFETs in weak inversion is derived.
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Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs
TL;DR: In this paper, a simple threshold voltage model of an undoped symmetrical double-gate MOSFET has been developed, based on an analytical solution of Poisson's equation for the potential distribution.
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Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors
Yahya Moubarak Meziani,Jerzy Łusakowski,Wojciech Knap,Nina Dyakonova,Frederic Teppe,K. Romanjek,M. Ferrier,Raphael Clerc,Gerard Ghibaudo,Frederic Boeuf,Thomas Skotnicki +10 more
TL;DR: In this paper, high-field magnetoresistance measurements were performed on short (down to 75-nm gate length) n-type Si metal-oxide-semiconductor field effect transistors.
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Theory of direct tunneling current in metal–oxide–semiconductor structures
TL;DR: In this paper, the physical bases of the most commonly used methods for the one-dimensional calculation of direct-tunneling current in metaloxide-semiconductor (MOS) structures (i.e., Bardeen's approach, the resonant transfer matrix method, and transparency-based approximations) are discussed.