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Rong Wang

Researcher at Chinese Academy of Sciences

Publications -  1085
Citations -  42153

Rong Wang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Membrane & Chemistry. The author has an hindex of 90, co-authored 950 publications receiving 32172 citations. Previous affiliations of Rong Wang include Lanzhou University & Hunan Agricultural University.

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Membranes for Osmotic Power

TL;DR: In this article, pressure-retarded osmosis (PRO) and reverse electrodialysis (RED) are two emerging membrane techniques that can utilize seawater to recover osmotic power from salinity gradients.
Journal Article

Accuracy of predicting in vitro ruminal methane production in goats using volatile fatty acids stoichiometric models

TL;DR: Investigation of in vitro ruminal methane (CH4) production using volatile fatty acids (VFA) stoichiometric models showed that the predicted CH4 production amounts were generally greater than the measured values obtained using the model 1, and the bias, slope and random error showed that fixed error exceeded 70%.
Proceedings ArticleDOI

Tunable deep UV narrow linewidth laser by frequency converted Ti:sapphire Laser at 5kHz repetition rate

TL;DR: In this paper, a tunable Ti:sapphire laser with line width of 0.05 nm was realized at repetition rate of 5 kHz, using the BIBO and KBBF as the nonlinear crystals.
Patent

Method for calculating age of mangrove forest

TL;DR: In this article, a method for calculating the age of a mangrove forest was proposed, which consisted of the following steps that lower mulching of the mangroves forest, lower surface soil of the closest naked beach land and manglove plant leaves are collected at a region to be calculated; the ratio (delta 13C) of soil organic carbon to the plant blade stable carbon isotope is measured; the naked beach ground is used as a background value, and according to a relevant formula, the ratio of mangroove source organic carbon, the known forest age
Patent

Low-damage indium gallium arsenic detector p+n junction preparation method

TL;DR: In this article, a low-damage indium gallium arsenic detector p+n junction preparation method is described, which comprises the following specific steps that: 1) silicon nitride junction formation mask deposition; 2) photosensitive area junction formation; 3) sampling and cleaning; 4) nitrogen atmosphere thermal treatment; and 5) surface damage layer removal.