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Graphene spintronics: the European Flagship perspective

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TLDR
In this article, the authors review current challenges and perspectives in graphene spintronics, which is one of the most promising directions of innovation, given its room-temperature long-spin lifetimes and the ability of graphene to be easily interfaced with other classes of materials (ferromagnets, magnetic insulators, semiconductors, oxides, etc), allowing proximity effects to be harvested.
Abstract
We review current challenges and perspectives in graphene spintronics, which is one of the most promising directions of innovation, given its room-temperature long-spin lifetimes and the ability of graphene to be easily interfaced with other classes of materials (ferromagnets, magnetic insulators, semiconductors, oxides, etc), allowing proximity effects to be harvested. The general context of spintronics is first discussed together with open issues and recent advances achieved by the Graphene Spintronics Work Package consortium within the Graphene Flagship project. Based on such progress, which establishes the state of the art, several novel opportunities for spin manipulation such as the generation of pure spin current (through spin Hall effect) and the control of magnetization through the spin torque phenomena appear on the horizon. Practical applications are within reach, but will require the demonstration of wafer-scale graphene device integration, and the realization of functional prototypes employed for determined applications such as magnetic sensors or nano-oscillators. This is a specially commissioned editorial from the Graphene Flagship Work Package on Spintronics. This editorial is part of the 2D Materials focus collection on 'Progress on the science and applications of two-dimensional materials,' published in association with the Graphene Flagship. It provides an overview of key recent advances of the spintronics work package as well as the mid-term objectives of the consortium.

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Journal ArticleDOI

Future perspectives for spintronic devices

TL;DR: Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly as mentioned in this paper, which has led to the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer.
Journal ArticleDOI

van der Waals Layered Materials: Opportunities and Challenges

TL;DR: The vdW materials library, technology relevance, and specialties of vdw materials covering the vdD interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges are reviewed.
Journal ArticleDOI

Two-dimensional spintronics for low-power electronics

TL;DR: This Review Article examines the development of two-dimensional spintronics for low-power electronics, exploring potential devices and circuits, as well as the challenges that exist in delivering practical applications.
References
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Journal ArticleDOI

Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices.

TL;DR: This work ascribes this giant magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers.
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Current-driven excitation of magnetic multilayers

TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
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Emission of spin waves by a magnetic multilayer traversed by a current.

TL;DR: In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.
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Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

TL;DR: The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel, much stronger than the usual anisotropic magnetoresistance.
Journal ArticleDOI

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Andrea C. Ferrari, +68 more
- 04 Mar 2015 - 
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
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