Proceedings ArticleDOI
Recent enhancements in BSIM6 bulk MOSFET model
Harshit Agarwal,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,Navid Paydavosi,Juan Pablo Duarte,Shantanu Agnihotri,Chandan Yadav,Pragya Kushwaha,Yogesh Singh Chauhan,Christian Enz,Ali M. Niknejad,Chenming Hu +11 more
- pp 53-56
TLDR
In this paper, the authors discuss the recent enhancements made in the BSIM6 bulk MOSFET model and validate symmetry of the model by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC.Abstract:
In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around Vbs=Vbd=0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results are reported. Model capabilities are compared against an advanced 40nm CMOS technology and it is observed that simulated results are in excellent agreement with the measured data.read more
Citations
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Journal ArticleDOI
BSIM6: Analog and RF Compact Model for Bulk MOSFET
Yogesh Singh Chauhan,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,M. A. Karim,Harshit Agarwal,Sourabh Khandelwal,Navid Paydavosi,Juan Pablo Duarte,Christian Enz,Ali M. Niknejad,Chenming Hu +10 more
TL;DR: The BSIM6 model has been extensively validated with industry data from 40-nm technology node and shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations.
Journal ArticleDOI
Engineering Negative Differential Resistance in NCFETs for Analog Applications
Harshit Agarwal,Pragya Kushwaha,Juan Pablo Duarte,Yen-Kai Lin,Angada B. Sachid,Ming-Yen Kao,Huan-Lin Chang,Sayeef Salahuddin,Chenming Hu +8 more
TL;DR: It is demonstrated that the NDR effect for NCFET in the static limit can be engineered to reduce degradation in short-channel devices without compromising the subthreshold gain, which is crucial for analog applications.
Journal ArticleDOI
Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs
TL;DR: In this article, an advanced methodology for fast 3D Technology Computer Aided Design (TCAD) electrothermal simulation for the analysis of power devices is presented. But the proposed methodology is based on coupling finite element method (FEM) thermal and circuit electrical simulation in a mixed-mode setup.
Journal ArticleDOI
Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction
TL;DR: In this article, an electrothermal simulation based on the relaxation method is developed for Synopsys TCAD Sentaurus environment for decreasing the simulation time for complex 3D devices.
Journal ArticleDOI
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
Harshit Agarwal,Chetan Gupta,Ravi Goel,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +10 more
TL;DR: In this article, a BSIM-based compact model for a high-voltage MOSFET is presented, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect.
References
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Journal ArticleDOI
Validation of MOSFET model Source–Drain Symmetry
TL;DR: In this paper, the authors present dc and ac tests that verify whether a MOSFET model is symmetric with respect to a source-drain reversal, and also verify the symmetry of gate and bulk currents.
Proceedings ArticleDOI
BSIM — Industry standard compact MOSFET models
Yogesh Singh Chauhan,S. Venugopalan,Mohammed A. Karim,Sourabh Khandelwal,Navid Paydavosi,P. K. Thakur,Ali M. Niknejad,Chenming Hu +7 more
TL;DR: The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFETs as discussed by the authors, which is the surface potential based model for multi-gate MOSFs.
Proceedings ArticleDOI
A non-iterative physical procedure for RF CMOS compact model extraction using BSIM6
Sriramkumar Venugopalan,Krishnanshu Dandu,Samuel Martin,Richard J. K. Taylor,Claude R. Cirba,Xin Zhang,Ali M. Niknejad,Chenming Hu +7 more
TL;DR: This procedure is applicable to any MOSFET compact model with all necessary RF-related components in it and has been validated on silicon data from multiple technology nodes for a wide range of bias and frequency.
BSIM6: Symmetric bulk MOSFET model
Yogesh Singh Chauhan,M. A. Karim,Sriramkumar Venugopalan,Sourabh Khandelwal,P. K. Thakur,Navid Paydavosi,Angada B. Sachid,Ali M. Niknejad,Chenming Hu +8 more
TL;DR: The BSIM6 Model as mentioned in this paper is the next generation Bulk RF MOSFET model and has been tested in DC, small signal, transient and RF simulation and shows excellent convergence in circuit simulation.