S
Souvik Mahapatra
Researcher at Indian Institute of Technology Bombay
Publications - 242
Citations - 6126
Souvik Mahapatra is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Negative-bias temperature instability & Gate oxide. The author has an hindex of 35, co-authored 228 publications receiving 5472 citations. Previous affiliations of Souvik Mahapatra include Indian Institutes of Technology & Alcatel-Lucent.
Papers
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Proceedings ArticleDOI
A predictive reliability model for PMOS bias temperature degradation
TL;DR: The physical mechanisms responsible for degradation over a wide range of stress bias and temperature have been identified in p-MOSFETs and a novel scaling methodology is proposed that helps in obtaining a simple, analytical model useful for reliability projection as discussed by the authors.
Proceedings ArticleDOI
Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) I DLIN Technique
E.N. Kumar,V.D. Maheta,Shweta Purawat,Ahmad E. Islam,Christopher S. Olsen,Khaled Ahmed,Muhammad A. Alam,Souvik Mahapatra +7 more
TL;DR: In this article, an ultra-fast on-the-fly (UF-OTF) IDLIN technique has been developed and used to study gate insulator process dependence of NBTI in silicon oxynitride (SiON) p-MOSFETs.
Journal ArticleDOI
Negative bias temperature instability in CMOS devices
TL;DR: In this article, the experimental and modeling efforts to understand the mechanism of negative bias temperature instability in p-MOSFETs are reviewed, and the degradation and recovery of generated damage and its bias, temperature and AC frequency dependence are modeled using the standard Reaction-Diffusion theory.
Journal ArticleDOI
Hole energy dependent interface trap generation in MOSFET Si/SiO/sub 2/ interface
TL;DR: In this article, the authors studied the nature and composition of interface-trap interfaces in p-MOSFETs as a function of hole energy and observed the time dependence of generation during stress and the amount of recovery after stress.
Proceedings ArticleDOI
A comprehensive AC / DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence
Sujay B. Desai,Subhadeep Mukhopadhyay,Nilesh Goel,N. Nanaware,B. Jose,K. Joshi,Souvik Mahapatra +6 more
TL;DR: A comprehensive NBTI framework using the H/H2 RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments as mentioned in this paper.