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Showing papers in "Microelectronic Engineering in 2005"


Journal ArticleDOI
TL;DR: In this article, the electrical and dielectric properties of Al/SiO"2/p-Si (MOS) structures were studied in the frequency range 10kHz-10MHz and in the temperature range 295-400K.

169 citations


Journal ArticleDOI
TL;DR: In this paper, a forest of micro-pillars is used to control the micro structure density under the drop, and thus the degree of super-hydrophobicity of surfaces.

162 citations


Journal ArticleDOI
TL;DR: A template-based vision system for the 100% inspection of wafer die surfaces has been developed with a requirement for the detection of flaws as small as two thousandths of an inch on parts up to 8-in.

155 citations


Journal ArticleDOI
TL;DR: In this article, a short survey on competitive nonvolatile memory technologies and focuses then on ferroelectric memories is presented. But the most challenging task to achieve storage above 128 Mb, is the conformal coverage of 3-D electrodes, e.g. by atomic layer deposition (ALD).

148 citations


Journal ArticleDOI
TL;DR: High-k gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging nonsilicon nanoelectronic transistors as mentioned in this paper.

142 citations


Journal ArticleDOI
TL;DR: In this paper, deep reactive ion etching (DRIE) of borosilicate glass was carried out using SF 6 and SF 6/Ar plasmas in an inductively coupled plasma (ICP) reactor.

133 citations


Journal ArticleDOI
TL;DR: In this paper, the fullpotential linearized augmented plane wave (FP-LAPW) method within the density functional theory is used to investigate the structural and electronic properties of ZrSiO"4 in its low pressure phase (zircon).

132 citations


Journal ArticleDOI
TL;DR: In this paper, a new type of thermoelectric micro-generator, which is composed of n-type and p-type Bi"2Te"3 nanowire array thermolectric materials, is designed to be energy source for miniaturized solid-state devices such as MEMS, micro-electrical system and even ''system on a chip''.

129 citations


Journal ArticleDOI
TL;DR: In this article, the scaling of Si CMOS in the sub-65nm regime has been studied and new device structures and new materials have to be created in order to continue the historic progress in information processing and transmission.

123 citations


Journal ArticleDOI
TL;DR: As device scaling is entering the sub-25nm range, multiple gate device architectures are needed to fulfill the ITRS requirements, since they offer a greatly improved electrostatic control of the channel.

116 citations


Journal ArticleDOI
TL;DR: In this article, a mass productive and reproducible assembly technique of a single bundle of single-walled carbon nanotubes (sb-SWNTs) using dielectrophoresis (DEP) was presented.

Journal ArticleDOI
TL;DR: In this article, the authors proposed a mask writing and inspection technology that would lead to significantly less expensive masks, and relaxing the requirements on control of individual edge positions (i.e., a fixed-shape projector) would significantly ease the above challenges.

Journal ArticleDOI
TL;DR: In this paper, an antireflection subwavelength grating (SWG) was fabricated on a polymethyl methacrylate (PMMA) by a spin-coating replication technique.

Journal ArticleDOI
TL;DR: In this paper, a simple method to make thin, homogeneous composite films with varying amounts of ceramic filler content has been proposed, and these nanocomposite films exhibited stable dielectric properties in the various frequency ranges.

Journal ArticleDOI
TL;DR: In this article, the work function and thermal stability of TiN gate material for deep sub-micron CMOS, elaborated by using metal organic atomic layer deposition, from TDMAT and NH"3 precursors.

Journal ArticleDOI
TL;DR: In this article, a thin epitaxially grown Si layer is used as the high-k dielectric to obtain low interface state density and high carrier mobility for Ge MOSFETs.

Journal ArticleDOI
TL;DR: The challenges appearing during the integration of ultra low-k dielectrics will be discussed, since a proper understanding of these issues is essential for downscaling of the interconnect system.

Journal ArticleDOI
TL;DR: In this article, the energy levels of the oxygen vacancy and oxygen interstitial defects in HfO2 using methods not needing a band gap correction were calculated. But they did not consider the effect of band offsets.

Journal ArticleDOI
TL;DR: In this paper, a valveless micropump in glass, which is magnetically actuated using the sinusoidal current of an external electromagnet, is presented.

Journal ArticleDOI
TL;DR: In this article, a simulation model was developed based on a viscous fluid to predict the polymer flow behavior during the imprinting process, and the predicted flow patterns are qualitatively similar to the experimental result under an isothermal condition.

Journal ArticleDOI
TL;DR: In this article, a thorough investigation of the bond strength between the photo-polymer SU-8 and Au was conducted by pull-test experiments, below the glass transition temperature of the polymer.

Journal ArticleDOI
TL;DR: In this paper, a subwavelength aluminum (Al) gratings with a period of 200nm using nanoimprint lithography and reactive ion etching (RIE) were demonstrated using the etch mask formed by NIL.

Journal ArticleDOI
TL;DR: In this paper, a pressure vessel type imprinting system was used to imprint the patterns as small as 150 nm over whole 4-in. diameter wafer with near zero residual layer.

Journal ArticleDOI
TL;DR: In this article, the authors present a simulation to model the flow and coalescence of the multiple fluid drops and the effect the number of drops dispensed has on imprinting time, which is shown to decrease with increasing numbers of drops or with an applied force on the template.

Journal ArticleDOI
TL;DR: In this article, the roughness of the etched silicon surface was studied as a function of the etching parameters, and it was observed that roughness is highly dependent on the solution concentration and temperature.

Journal ArticleDOI
TL;DR: The results show that the established bio-processing protocol significantly enhances the protein immobilization on both glass and poly-dimethylsiloxane surfaces, thereby allowing one to develop a large number of applications.

Journal ArticleDOI
TL;DR: In this paper, two dimensional photonic band gap structures on GaAs/AlGaAs, Si"3N"4 and Si/SiO"2 have been fabricated using a 30keV gallium ion beam.

Journal ArticleDOI
TL;DR: In this article, the effect of changing process parameters on the material removal rate in chemical mechanical polishing (CMP) of Si(100) was examined, and a bench-top machine and silica based slurries were used.

Journal ArticleDOI
TL;DR: In this paper, a technique for the fabrication of three dimensional microfluidic channels in optically transparent substrates consisting of polymers with different properties is presented, which can be used to fabricate large numbers of highly precise, complex microchannels via replication from a single similarly precise master, containing microstructures fabricated from silicon-based materials using lithographic micromachining techniques.

Journal ArticleDOI
TL;DR: In this article, the electrical properties of titanium oxide (TiO"2) deposited on strained-Si heterolayers by plasma enhanced chemical vapor deposition (PECVD) from an organo-metallic precursor titanium isopropoxide (TTIP), have been investigated.