S
Souvik Mahapatra
Researcher at Indian Institute of Technology Bombay
Publications - 242
Citations - 6126
Souvik Mahapatra is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Negative-bias temperature instability & Gate oxide. The author has an hindex of 35, co-authored 228 publications receiving 5472 citations. Previous affiliations of Souvik Mahapatra include Indian Institutes of Technology & Alcatel-Lucent.
Papers
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Journal ArticleDOI
Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions
Narendra Parihar,Uma Sharma,Richard G. Southwick,Miaomiao Wang,James H. Stathis,Souvik Mahapatra +5 more
TL;DR: In this article, a comprehensive modeling framework involving uncorrelated contributions from the generation of interface traps, hole trapping in preexisting, and generation of new bulk insulator traps is used to quantify measured data.
Journal ArticleDOI
Controversial issues in negative bias temperature instability
TL;DR: Two competing models of Negative Bias Temperature Instability, Reaction-Diffusion and Defect-Centric, are evaluated.
Journal ArticleDOI
Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs
TL;DR: In this paper, the influence of channel length and oxide thickness on the hot-carrier induced interface (N/sub it/) and oxide trap profiles is studied in n-channel LDD MOSFET's using a novel charge pumping (CP) technique.
Proceedings ArticleDOI
HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation
K. Joshi,Steven Hung,Subhadeep Mukhopadhyay,V. Chaudhary,N. Nanaware,B. Rajamohnan,T. Sato,M. Bevan,A. Wei,Atif Noori,B. McDougal,Chi-Nung Ni,G. Saheli,Christopher Lazik,P. Liu,D. Chu,L. Date,Suman Datta,Adam Brand,J. Swenberg,Souvik Mahapatra +20 more
TL;DR: In this paper, NBTI and PBTI were studied in IL/HK/MG gate stacks having EOT down to 6A and fabricated using low T RTP based thermal IL and a novel IL/ HK integration.
Journal ArticleDOI
Defect Generation in p-MOSFETs Under Negative-Bias Stress: An Experimental Perspective
TL;DR: In this paper, a focused review is made of previously reported (2002-2007) work on negative-bias temperature-instability (NBTI) measurement and analysis, using suitable cross-reference to other published work, the impacts of stress condition, characterization technique, and gate-oxide process on measured NBTI parameters are reviewed.