S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
Papers
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Journal ArticleDOI
Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy.
Chi-Kuang Sun,Shih-Wei Chu,Shi-Peng Tai,Stacia Keller,Amber C. Abare,Umesh K. Mishra,Steven P. DenBaars +6 more
TL;DR: The GaN substrate area with bright bandedge luminescence corresponds to the area with strong SHG signals indicating a higher stained-induced piezoelectric field, which opens new ways for the physical property study of this important material system and can provide interesting details that are not readily available by other microscopic techniques.
Patent
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
Michael D. Craven,Stacia Keller,Steven P. DenBaars,Tal Margalith,James S. Speck,Shuji Nakamura,Umesh K. Mishra +6 more
TL;DR: In this article, non-polar (Al,B,In,Ga) N layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD.
Journal ArticleDOI
Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films
Stacia Keller,P. Cantu,Craig Moe,Yuan Wu,Salka Keller,Umesh K. Mishra,James S. Speck,Steven P. DenBaars +7 more
TL;DR: In this article, the influence of metalorganic chemical vapor deposition conditions on the electrical and optical properties was investigated for silicon-doped AlxGa1-xN films with x>0.5 grown on sapphire and 6H-SiC substrates.
RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on
TL;DR: In this paper, a high-performance nitrogen-polar AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor is presented on sapphire substrate using metal-organic chemical vapor deposition (MOCVD).
Journal ArticleDOI
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
Jing Lu,Dan Denninghoff,Ramya Yeluri,Shalini Lal,Geetak Gupta,Matthew A. Laurent,Stacia Keller,Steven P. DenBaars,Umesh K. Mishra +8 more
TL;DR: In this paper, a combinational back barrier with both AlGaN and InAlN materials is proposed and the dependence of channel conductivity on channel thickness is investigated for different back barrier designs.