S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
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Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride
TL;DR: In this paper, a femtosecond Cr:forsterite laser was used to scan second-harmonic generation and 3D generation microscopy of a gallium nitride (GaN) sample.
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W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
Brian Romanczyk,Umesh K. Mishra,Xun Zheng,Matthew Guidry,Haoran Li,Nirupam Hatui,Christian Wurm,Athith Krishna,Elaheh Ahmadi,Stacia Keller +9 more
TL;DR: In this article, a 40nm-thick ex-situ silicon nitride passivation layer was added to nitrogen-polar gallium nitride (GNT) transistors to improve the dispersion control.
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OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET
TL;DR: In this paper, a metal-organic chemical vapor deposition (MOCVD)-regrown Unintentionally Doped (UID)-GaN interlayer followed by an in-situ dielectric cap on the n-p-n trenched structure is created, resulting in reduced ON-resistance.
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880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates
TL;DR: In this paper, a high-voltage metal-insulator-semiconductor gate trench current aperture vertical electron transistor using metal-organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si3N4 as the gate dielectric was reported.
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Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
Yan-Ling Hu,Robert M. Farrell,Carl J. Neufeld,Michael Iza,Samantha C. Cruz,Nathan Pfaff,Dobri Simeonov,Stacia Keller,Shuji Nakamura,Steven P. DenBaars,Umesh K. Mishra,James S. Speck +11 more
TL;DR: In this article, a two-step GaN barrier growth methodology was developed for InxGa1−xN/GaN multiple quantum well solar cells in which a lower temperature GaN cap layer was grown on top of the quantum wells (QWs) and then followed by a higher temperature GAN barrier layer.