S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
Papers
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Journal ArticleDOI
Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
Tetsuya Fujiwara,Tetsuya Fujiwara,Stacia Keller,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +5 more
TL;DR: In this article, a low ohmic contact resistance m-plane AlGaN/GaN heterojunction field effect transistors were demonstrated using a regrown n+-GaN contact layer.
Journal Article
Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al
Tetsuya Fujiwara,Ramya Yeluri,Dan Denninghoff,Jing Lu,Stacia Keller,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +7 more
TL;DR: In this paper, an enhancement-mode m-plane AlGaN/GaN heterojunction field effect transistors were fabricated with an Al2O3 gate dielectric deposited by atomic layer deposition (ALD).
Proceedings ArticleDOI
W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width
Matthew Guidry,Steven Wienecke,Brian Romanczyk,Xun Zheng,Haoran Li,Elaheh Ahmadi,Karine Hestroffer,Stacia Keller,Umesh K. Mishra +8 more
TL;DR: In this article, a W-band on-wafer passive load pull system constructed for the characterization of high power density N-polar GaN devices is presented, and the tradeoff between these is analyzed.
Journal ArticleDOI
Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress
David F. Brown,Siddharth Rajan,Stacia Keller,Yun-Hao Hsieh,Steven P. DenBaars,Umesh K. Mishra +5 more
TL;DR: In this article, the drift mobility of two-dimensional electron gasses in N-polar GaN/AlGaN/GaN heterostructures was measured with capacitance and resistance measurements using gated transmission line method structures.
Journal ArticleDOI
Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors
Giacinta Parish,Farah Liyana Muhammad Khir,Farah Liyana Muhammad Khir,N. Radha Krishnan,Jianan Wang,Jonathan S. Krisjanto,Haoran Li,Gilberto A. Umana-Membreno,Stacia Keller,Umesh K. Mishra,Murray V. Baker,Brett Nener,Matthew Myers,Matthew Myers +13 more
TL;DR: In this paper, the authors compared the pH response of a reference electrode-free AlGaN/GaN device with and without a GaN capping layer, and showed that in the absence of an external reference electrode, a linear response towards pH requires a GAN cap layer.