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Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
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Journal ArticleDOI
Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures
TL;DR: In this article, the 2DEG mobility as a function of ns is calculated in N-polar high electron mobility transistors for three different aforementioned cases, and is compared to that in the Ga polar HEMT structures.
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Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition
TL;DR: In this paper, high electron mobility transistors (HEMTs) were fabricated from GaN/AlGaN/GaN heterostructures grown on n-type vicinal C-face SiC substrates by metalorganic chemical vapor deposition.
Journal ArticleDOI
Growth and properties of InGaN nanoscale islands on GaN
Stacia Keller,Bernd Keller,M. S. Minsky,John E. Bowers,Umesh K. Mishra,Steven P. DenBaars,Werner Seifert +6 more
TL;DR: In this article, strong photoluminescence and radiative recombination lifetimes longer than 1 ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands.
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Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN
Shubhra S. Pasayat,Chirag Gupta,Dillon Acker-James,Daniel A. Cohen,Steven P. DenBaars,Shuji Nakamura,Stacia Keller,Umesh K. Mishra,Ieee Fellow +8 more
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Integration of>tex /tex<Thin Films With AlGaN/GaN HEMT Circuits
Hongtao Xu,Nadia K. Pervez,P. J. Hansen,Likun Shen,Stacia Keller,Umesh K. Mishra,Robert A. York +6 more
TL;DR: In this paper, a sacrificial SiO buffer layer is used to protect the underlying AlGaN during the RF magnetron sputtering of the BST film at an elevated temperature, with a care- fully controlled heater ramp rate to avoid degradation of the ohmic contacts on the HEMT.