S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
Papers
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Journal ArticleDOI
N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage
Xun Zheng,Matthew Guidry,Haoran Li,Elaheh Ahmadi,Karine Hestroffer,Brian Romanczyk,Steven Wienecke,Stacia Keller,Umesh K. Mishra +8 more
TL;DR: In this article, a GaN channel thickness grown by metal-organic chemical vapor deposition on sapphire substrate with a high combination of current/power gain cutoff frequencies and three-terminal breakdown voltage (BVDS) was demonstrated.
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Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
Tetsuya Fujiwara,Siddharth Rajan,Stacia Keller,Masataka Higashiwaki,James S. Speck,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the first demonstration of the m-plane AlGaN/GaN heterojunction field-effect transistor was reported, which exhibited enhancement-mode operation, with the threshold voltage of +2.0 V owing to the nonpolar Al-GaN and GaN heterjunction.
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Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography
Bastien Bonef,Massimo Catalano,Cory Lund,Steven P. DenBaars,Shuji Nakamura,Umesh K. Mishra,Moon J. Kim,Stacia Keller +7 more
TL;DR: In this article, energy dispersive X-ray spectroscopy (EDX) and atom probe tomography (APT) are used to characterize N-polar InGaN/GaN quantum wells at the nanometer scale.
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Generation of coherent acoustic phonons in strained GaN thin films
Yue-Kai Huang,Gia-Wei Chern,Chi-Kuang Sun,Y. Smorchkova,Stacia Keller,Umesh K. Mishra,Steven P. DenBaars +6 more
TL;DR: In this article, coherent acoustic phonon oscillations were generated and studied in strained GaN thin films, where the longitudinal interference of an ultraviolet femtosecond pump pulse created periodic carrier distribution.
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Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current
Aditya Raj,Athith Krishna,Nirupam Hatui,Chirag Gupta,Raina Jang,Stacia Keller,Umesh K. Mishra +6 more
TL;DR: In this paper, a two-step approach involving a dry etch followed by a Tetramethylammonium hydroxide (TMAH) wet etch was employed to obtain fins with minimum width of 50 nm using optical lithography.