S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
Papers
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Journal ArticleDOI
Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N
TL;DR: In this article, the authors used atom probe tomography (APT) to detect alloy fluctuations in ternary nitride and found that detection artifacts in APT could lead to misinterpretation of the actual compositions.
Journal ArticleDOI
Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films
Henry Collins,Islam Sayed,Wenjian Liu,Shubhra S. Pasayat,Aidan A. Taylor,Weiyi Li,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this article, the authors investigated the effect of pore morphology on regrown GaN film surface quality and found that an increase in the anodization voltage was found to increase the pore diameter and reduce the density of inclined sidewalls near the surface of the porosified films.
Proceedings ArticleDOI
Transient wavefunction analysis of a phononic bandgap nano-crystal
Kung-Hsuan Lin,Chieh-Feng Chang,An-Ting Tien,Ken-Ming Lin,Guang-Yu Guo,Chang-Chi Pan,Jen-Inn Chyi,Stacia Keller,Umesh K. Mishra,Steven P. DenBaars,Chi-Kuang Sun +10 more
TL;DR: In this paper, the reflection transfer function of a phononic bandgap nano-crystal including phase information was obtained by using a singlequantum-well in a phonon cavity.
Journal ArticleDOI
Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride
Jianan Wang,Hua Li,Haoran Li,Stacia Keller,Umesh K. Mishra,Brett Nener,Giacinta Parish,Rob Atkin +7 more
TL;DR: In this paper, the surface of an AlGaN/GaN structure was oxidized with hot piranha solution and oxygen plasma to probe the surface charge properties of the surface in aqueous solutions of varying pH.
Patent
Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers
TL;DR: An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region, is described in this paper.