S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
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Journal ArticleDOI
Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
Dong Ji,Wenwen Li,Anchal Agarwal,Silvia H. Chan,Jeffrey Haller,Davide Bisi,Michelle Labrecque,Chirag Gupta,Bill Cruse,Rakesh K. Lal,Stacia Keller,Umesh K. Mishra,Srabanti Chowdhury +12 more
TL;DR: This letter reports on the dynamic performance of large-area GaN vertical trench MOSFETs fabricated on bulk GaN substrates, which demonstrated excellent DC performance and damage to the trench sidewalls caused by RIE dry etching led to poor dynamic performance.
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N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
Brian Romanczyk,Weiyi Li,Matthew Guidry,Nirupam Hatui,Athith Krishna,Christian Wurm,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: This work shows that N-polar GaN deep recess HEMTs grown on sapphire match the power performance of a device on SiC up to 14 V with 5.1 W/mm of output power density, and examines the impact of encapsulating the device in a low dielectric constant film often used for the implementation of a RF wiring environment.
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Growth of embedded photonic crystals for GaN-based optoelectronic devices
Elison Matioli,Stacia Keller,Feng Wu,Yongseok Choi,Evelyn L. Hu,James S. Speck,Claude Weisbuch +6 more
TL;DR: In this paper, three different techniques were proposed to fabricate embedded photonic crystals in GaN-based structures by metal organic chemical vapor deposition, geared toward high efficiency and high directionality light emitting diodes.
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AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths
Craig Moe,Yuan Wu,Joachim Piprek,Stacia Keller,James S. Speck,Steven P. DenBaars,David Todd Emerson +6 more
TL;DR: In this article, a distributed Bragg reflector with up to 21 periods consisting of AlN and Al0.58Ga0.42N layers was grown by metalorganic chemical vapor deposition.
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N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates
Elaheh Ahmadi,Feng Wu,Haoran Li,Stephen W. Kaun,Maher Tahhan,Karine Hestroffer,Stacia Keller,James S. Speck,Umesh K. Mishra +8 more
TL;DR: In this paper, the growth of InAlN on vicinal (4° miscut along GaN GaN-on-sapphire substrates) was studied using scanning transmission electron microscopy (STEM).