S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
Papers
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Journal ArticleDOI
Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures
TL;DR: In this paper, the authors showed that unintentional Ga incorporation had a negligible effect on the electronic properties of GaN/AlN//AlGaN structures with nominally 0.7 nm thick AlN interlayer and sheet carrier densities in the order of 1 × 1013 cm−3.
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First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE
Shubhra S. Pasayat,Elaheh Ahmadi,Brian Romanczyk,Onur S. Koksaldi,Anchal Agarwal,Matthew Guidry,Chirag Gupta,Christian Wurm,Stacia Keller,Umesh K. Mishra +9 more
TL;DR: In this paper, a N-polar GaN-on-GaN high-electron mobility transistors targeting high efficiency in millimeter wave power amplification applications were fabricated on epitaxial layers grown by plasma assisted molecular beam epitaxy (PAMBE) on on-axis semi-insulating bulk GaN substrates.
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A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency
TL;DR: In this article, a donor-like trap at the InGaN/GaN interface with net negative polarization was found to have an energy level of 0.071 eV.
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Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
Brian Romanczyk,Matthew Guidry,Xun Zheng,Pawana Shrestha,Haoran Li,Elaheh Ahmadi,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this article, an improvement in the 30 GHz continuous-wave (CW) power density through modification of the W-band device with the demonstration of 10.3 W/mm at 47.4% power-added efficiency (PAE).
Patent
Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition
TL;DR: In this article, a method for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD is described.