S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
Papers
More filters
Patent
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
Arpan Chakraborty,Benjamin A. Haskell,Stacia Keller,James S. Speck,Steven P. DenBaars,Shuji Nakamura,Umesh K. Mishra +6 more
TL;DR: In this paper, a method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as non-polar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD) is presented.
Journal ArticleDOI
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
TL;DR: In this article, the presence of electron overflow in light-emitting diodes under typical bias conditions was evaluated using test structures comprised of a standard LED structure with an extra Mg-doped quantum well inserted on the p-type side of the electron blocking layer.
Journal ArticleDOI
N-polar GaN epitaxy and high electron mobility transistors
Man Hoi Wong,Stacia Keller,Sansaptak Dasgupta Nidhi,Daniel J Denninghoff,Seshadri Kolluri,David F. Brown,Jing Lu,Nicholas Fichtenbaum,Elaheh Ahmadi,Uttam Singisetti,Alessandro Chini,Siddharth Rajan,Steven P. DenBaars,James S. Speck,Umesh Mishra +14 more
TL;DR: In this article, the progress of N-polar (Al, In, Ga)N materials for Npolar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition.
Journal ArticleDOI
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
Debdeep Jena,Sten Heikman,D. S. Green,D. Buttari,Robert Coffie,Huili Xing,Stacia Keller,S. P. DenBaars,James S. Speck,Umesh K. Mishra,I. P. Smorchkova +10 more
TL;DR: In this article, the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors was presented, by exploiting the large polarization charges in the 3-D electron slabs.
Journal ArticleDOI
Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
Debdeep Jena,Sten Heikman,D. S. Green,Ilan B. Yaacov,Robert Coffie,Huili Xing,Stacia Keller,S. P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this article, the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors was presented, where the large polarization charge was exploited to create wide slabs of high density mobile electrons without introducing shallow donors.