S
Stacia Keller
Researcher at University of California, Santa Barbara
Publications - 343
Citations - 18608
Stacia Keller is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 57, co-authored 332 publications receiving 16636 citations. Previous affiliations of Stacia Keller include University of California.
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Journal ArticleDOI
Impact of strain on free-exciton resonance energies in wurtzite AlN
Hirokatsu Ikeda,Takahiro Okamura,Kodai Matsukawa,Takayuki Sota,Mariko Sugawara,Takuya Hoshi,P. Cantu,Rajat Sharma,John F. Kaeding,Stacia Keller,Umesh K. Mishra,Kei Kosaka,Keiichiro Asai,Shigeaki Sumiya,Tomohiko Shibata,Mitsuhiro Tanaka,James S. Speck,Steven P. DenBaars,Shuji Nakamura,T. Koyama,T. Koyama,Takeyoshi Onuma,Takeyoshi Onuma,Shigefusa F. Chichibu,Shigefusa F. Chichibu +24 more
TL;DR: In this article, the free-exciton resonance energies in AlN epilayers are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band parameters.
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Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition
Gilberto A. Umana-Membreno,Giacinta Parish,Nicholas A. Fichtenbaum,Stacia Keller,Umesh K. Mishra,Brett Nener +5 more
TL;DR: In this paper, the authors used deep-level transient spectroscopy (DLTS) to detect electron traps with activation energies of 0.21, 0.53, and 0.8 eV.
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Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
Anna Podolska,Martin Kocan,Alex M. Garces Cabezas,Timothy D. Wilson,Gilberto A. Umana-Membreno,Brett Nener,Giacinta Parish,Stacia Keller,Umesh K. Mishra +8 more
TL;DR: In this article, the pH and ion sensitivity of AlGaN/GaN heterostructure devices were investigated, and the authors attributed this to the formation of a double layer at the liquid/semiconductor interface.
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N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz
Steven Wienecke,Brian Romanczyk,Matthew Guidry,Haoran Li,Xun Zheng,Elaheh Ahmadi,Karine Hestroffer,Ludovico Megalini,Stacia Keller,Umesh K. Mishra +9 more
TL;DR: In this article, an N-polar GaN HEMT with an in situ unintentionally doped GaN epitaxial passivation layer in the access regions of the transistor is presented.
Journal ArticleDOI
Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
Sten Heikman,Stacia Keller,S. Newman,Yuan Wu,Craig Moe,Brendan Jude Moran,Mathew C. Schmidt,Umesh K. Mishra,James S. Speck,Steven P. DenBaars +9 more
TL;DR: Fully coalesced Al0.93Ga0.07N films were demonstrated by metalorganic chemical vapor deposition on deep grooved SiC substrates in this article, where the deep grooves enabled coalescence despite of parasitic growth in the trenches.