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Stephan Wirths
Researcher at IBM
Publications - 102
Citations - 3230
Stephan Wirths is an academic researcher from IBM. The author has contributed to research in topics: Epitaxy & Lasing threshold. The author has an hindex of 24, co-authored 94 publications receiving 2752 citations. Previous affiliations of Stephan Wirths include Forschungszentrum Jülich.
Papers
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Proceedings ArticleDOI
Microcavity III-V lasers monolithically grown on silicon
Benedikt Mayer,Svenja Mauthe,Yannick Baumgartner,Stephan Wirths,J. Winniger,Philipp Staudinger,Heinz Schmid,Marilyne Sousa,Lukas Czornomaz,Kirsten E. Moselund +9 more
TL;DR: In this paper, a template assisted selective epitaxy (TASE) was used to grow III-V micro-cavity lasers on silicon substrates, and two variations of this technique were discussed; the direct growth of disc lasers and the two-step approach via a virtual substrate.
Proceedings ArticleDOI
On the track towards an electrically pumped group IV laser
Detlev Grützmacher,Daniela Stange,Nils von den Driesch,Stephan Wirths,Siegfried Mantl,Dan Buca,Jean-Michel Hartmann,R. Geiger,Hans Sigg +8 more
TL;DR: GeSn and SiGeSn alloys have been grown by reactive gas source deposition using a commercial 8″ LPCVD tool as discussed by the authors, and the wavelength is adjusted between 2.0 and 2.6 µm at 20K in dependence on the Sn concentration.
Journal ArticleDOI
Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1xSnx, SiyGe1xySnx) with Al2O3
TL;DR: In this article, a germanate interlayer between the Ge-based semiconductors and alumina was found to increase the electron barrier at the interface of SiyGe1xySnx binary and ternary alloys.
Book ChapterDOI
High Sn‐Content GeSn Light Emitters for Silicon Photonics
Daniela Stange,C. Schulte-Braucks,N. von den Driesch,Stephan Wirths,Gregor Mussler,S. Lenk,Toma Stoica,S. Mantl,Detlev Grützmacher,Dan Buca,R. Geiger,T. Zabel,Hans Sigg,J.M. Hartmann,Zoran Ikonic +14 more
TL;DR: In this article, a systematic photoluminescence (PL) study of compressively strained, direct-bandgap GeSn alloys is presented, followed by the analysis of two different optical source designs.