S
Stephan Wirths
Researcher at IBM
Publications - 102
Citations - 3230
Stephan Wirths is an academic researcher from IBM. The author has contributed to research in topics: Epitaxy & Lasing threshold. The author has an hindex of 24, co-authored 94 publications receiving 2752 citations. Previous affiliations of Stephan Wirths include Forschungszentrum Jülich.
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Journal ArticleDOI
High- k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
Stephan Wirths,Daniela Stange,Maria-Angela Pampillón,A. T. Tiedemann,Gregor Mussler,A. Fox,Uwe Breuer,Bruno Baert,Enrique San Andrés,Ngoc Duy Nguyen,Jean-Michel Hartmann,Zoran Ikonic,Siegfried Mantl,Dan Buca +13 more
TL;DR: Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
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Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs
Stephan Wirths,Rene Troitsch,Gregor Mussler,J.M. Hartmann,Peter Zaumseil,Thomas Schroeder,S. Mantl,Dan Buca +7 more
TL;DR: The formation of new ternary NiGeSn and quaternary NiSiGeSn alloys has been investigated to fabricate metallic contacts on high Sn content, potentially direct bandgap group IV semiconductors as discussed by the authors.
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Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
Moritz Knoedler,Nicolas Bologna,Nicolas Bologna,Heinz Schmid,Mattias Borg,Mattias Borg,Kirsten E. Moselund,Stephan Wirths,Marta D. Rossell,Marta D. Rossell,Heike Riel +10 more
TL;DR: In this article, a template-assisted selective epitaxy (TASE) method was proposed to reduce defects due to lattice mismatch in Si-based Complementary-Metal-Oxide-Semiconductor (CMOS) technology.
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Epitaxial Growth of Ge1-xSnx by Reduced Pressure CVD Using SnCl4 and Ge2H6
Stephan Wirths,Dan Buca,A. T. Tiedemann,Bernhard Holländer,P. Bernardy,Toma Stoica,Detlev Grützmacher,Siegfried Mantl +7 more
TL;DR: In this paper, the epitaxial growth of Ge and GeSn on Si(100) was studied in the low temperature regime by reduced pressure chemical vapor deposition using showerhead technology.
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Manipulating Surface States of III–V Nanowires with Uniaxial Stress
G. Signorello,Saurabh Sant,Nicolas Bologna,M. Schraff,Ute Drechsler,Heinz Schmid,Stephan Wirths,Marta D. Rossell,Andreas Schenk,Heike Riel +9 more
TL;DR: Results reveal that strain technology can be used to shift surface states away from energy ranges in which device performance is negatively affected and represent a novel route to engineer the electronic properties of III-V devices.