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Stephan Wirths
Researcher at IBM
Publications - 102
Citations - 3230
Stephan Wirths is an academic researcher from IBM. The author has contributed to research in topics: Epitaxy & Lasing threshold. The author has an hindex of 24, co-authored 94 publications receiving 2752 citations. Previous affiliations of Stephan Wirths include Forschungszentrum Jülich.
Papers
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Proceedings ArticleDOI
Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si
Nils von den Driesch,Daniela Stange,Stephan Wirths,Denis Rainko,Gregor Mussler,Toma Stoica,Zoran Ikonic,Jean-Michel Hartmann,Detlev Grützmacher,Siegfried Mantl,Dan Buca +10 more
TL;DR: In this article, the authors presented electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%.
Proceedings ArticleDOI
GeSn for nanoelectronic and optical applications
Dan Buca,Stephan Wirths,Daniela Stange,Nils von den Driesch,Toma Stoica,Detlev Grützmacher,S. Mantl,Zoran Ikonic,J.M. Hartmann +8 more
TL;DR: In this paper, the growth and material properties of GeSn alloys and their application possibilities in photonic and nanoelectronic devices are discussed, and the list of group IV semiconductors is being extended beyond Ge to the semimetal Sn.
Proceedings ArticleDOI
GeSn lasers for CMOS integration
Dan Buca,N. von den Driesch,Daniela Stange,Stephan Wirths,R. Geiger,C. Schulte Braucks,S. Mantl,J.M. Hartmann,Zoran Ikonic,Jeremy Witzens,Hans Sigg,Detlev Grützmacher +11 more
TL;DR: In this paper, a set of different homojunction light emitting diodes and more complex heterostructure SiGeSn/GeSn LEDs are presented, which indicate that GeSn/SiGeSn heterostructures will be advantageous for future laser fabrication.
Journal ArticleDOI
Transition to the quantum hall regime in InAs nanowire cross-junctions
Johannes Gooth,Johannes Gooth,Mattias Borg,Heinz Schmid,Nicolas Bologna,Nicolas Bologna,Marta D. Rossell,Marta D. Rossell,Stephan Wirths,Kirsten E. Moselund,Kornelius Nielsch,Heike Riel +11 more
TL;DR: In this paper, a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the crossplane is presented.
Journal ArticleDOI
Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers
Linjie Liu,Lei Jin,Lars Knoll,Stephan Wirths,Dan Buca,Gregor Mussler,Bernhard Holländer,Dawei Xu,Zeng Feng Di,Miao Zhang,Siegfried Mantl,Qing-Tai Zhao +11 more
TL;DR: In this paper, the formation of Ni germanosilicide layers on strained SiGe/Si(100) substrates was investigated. And the morphology, composition and sheet resistance of the germano-sicide layers were investigated as a function of Al percentage and annealing temperature.