Journal ArticleDOI
Electronic Structures and Device Applications of Transparent Oxide Semiconductors: What Is the Real Merit of Oxide Semiconductors?
Toshio Kamiya,Hideo Hosono +1 more
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TLDR
In this paper, the main objective of this review is to provide an idea of how to create new functions in oxides and how to find suitable applications only oxides can realize.Abstract:
The main objective of this review is to provide an idea how to create new functions in oxides and how to find suitable applications only oxides can realize. Oxides have crystal and electronic structures largely different from those of conventional semiconductors such as Si and GaAs. Therefore, we should design suitable applications according to the inherent properties of oxide semiconductors if we intend to develop practical optoelectronic devices using oxides. In this review, we first briefly describe the characteristic features of oxide semiconductors from the viewpoints of crystal and electronic structures. Then three materials and related device applications are shown as examples. N-type amorphous oxide semiconductors (AOSs) can have electron transport properties superior even to silicon if they are in amorphous states. We propose that AOSs are favorable materials for active layers in low-temperature thin film device technology and demonstrate high-performance thin film transistors fabricated at room temperature on flexible plastic sheets. The second example is transparent p-type semiconductors. Employing chalcogen orbitals and layered crystal structures, large hole mobilities, degenerate p-type conduction, and room-temperature stable excitions are rendered in wide bangap materials. Room-temperature operation of excitonic blue light-emitting diodes was thereby demonstrated. The last is 12CaO·7Al2O3 in which the use of subnanometer-sized cages and anions clathrated in the cages creates many chemical, optical, and electronic functions.read more
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Journal ArticleDOI
A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
Jun Yeong Seok,Jun Yeong Seok,Seul Ji Song,Jung Ho Yoon,Kyung Jean Yoon,Tae Hyung Park,Dae Eun Kwon,Hyungkwang Lim,Hyungkwang Lim,Gun Hwan Kim,Doo Seok Jeong,Cheol Seong Hwang +11 more
TL;DR: In this article, two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. But these have critical correlations, however, and depend on the involved types of resistance switching memory.
Journal ArticleDOI
Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors
TL;DR: In this paper, constantvoltage bias (VDS = VGS = 30 V) stress measurements are performed for a period of 105 s on thin-film transistors (TFTs) with amorphous indium-gallium-zincoxide (IGZO) channel layers fabricated via RF sputtering using a postdeposition annealing temperature of 200degC, 250degC or 300degC.
Journal ArticleDOI
Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors
TL;DR: In this paper, an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) is demonstrated to exhibit an incremental channel mobility (μinc) of ∼17 cm2/V−1/s−1 and a turn-on voltage of ∼1/V.
Journal ArticleDOI
Surface potentials of magnetron sputtered transparent conducting oxides
Andreas Klein,Christoph Körber,André Wachau,F. Säuberlich,Yvonne Gassenbauer,Robert Schafranek,Steven P. Harvey,Thomas O. Mason +7 more
TL;DR: Work functions, ionization potentials, and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented in this article.
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Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO
TL;DR: In this article, the surface electronic-defect structure of In2O3-based transparent conducting oxides (TCO) was analyzed with x-ray and UV photoelectron spectroscopy before and after heat treatment in vacuum and oxygen atmosphere.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
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Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.
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Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
TL;DR: In this article, a working hypothesis for exploring optically transparent and electrically conducting amorphous oxides is proposed on the basis of simple considerations concerning chemical bonding, and three new materials are presented as examples.