U
U-In Chung
Researcher at Samsung
Publications - 221
Citations - 11640
U-In Chung is an academic researcher from Samsung. The author has contributed to research in topics: Transistor & Thin-film transistor. The author has an hindex of 45, co-authored 221 publications receiving 10510 citations.
Papers
More filters
Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array
Chwee-Lin Choong,Mun-Bo Shim,Byoung-Sun Lee,Sanghun Jeon,Sanghun Jeon,Dong-Su Ko,Tae-Hyung Kang,Jihyun Bae,Lee Sung-Hoon,Kyung-Eun Byun,Jungkyun Im,Yong Jin Jeong,Chan Eon Park,Jong-Jin Park,U-In Chung +14 more
TL;DR: A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode that contains an array of microscale pyramidal features and the electrode comprises a polymer composite.
Proceedings Article
Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory
Jae-Hoon Jang,Han-soo Kim,Wonseok Cho,Hoosung Cho,Jinho Kim,Sun Il Shim,Younggoan Jang,Jae-Hun Jeong,Byoungkeun Son,Dongwoo Kim,Kihyun,Jae-Joo Shim,Jin Soo Lim,Kyoung-hoon Kim,Su Youn Yi,Ju-Young Lim,De-will Chung,Hui-chang Moon,Sung-Min Hwang,Jong-Wook Lee,Yong-Hoon Son,U-In Chung,Won-Seong Lee +22 more
TL;DR: Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process and conventional bulk erase operation of the cell is successfully demonstrated.
Journal ArticleDOI
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim,Sunae Seo,Seung-Eon Ahn,Dongseok Suh,Myoung-Jae Lee,B.-H. Park,I. K. Yoo,I. G. Baek,Hyeok Kim,E. K. Yim,J. E. Lee,Park Soon,Hyun-Suk Kim,U-In Chung,J. T. Moon,B. I. Ryu +15 more
TL;DR: In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.
Journal ArticleDOI
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Sanghun Jeon,Seung-Eon Ahn,I-hun Song,Chang Jung Kim,U-In Chung,Eunha Lee,Inkyung Yoo,Arokia Nathan,Sungsik Lee,Khashayar Ghaffarzadeh,John Robertson,Kinam Kim +11 more
TL;DR: A gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer and is integrated in a transparent active-matrix photosensor array that has potential applications in contact-free interactive displays.