U-In Chung

TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

TL;DR: A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode that contains an array of microscale pyramidal features and the electrode comprises a polymer composite.

TL;DR: Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process and conventional bulk erase operation of the cell is successfully demonstrated.

TL;DR: In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.

TL;DR: A gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer and is integrated in a transparent active-matrix photosensor array that has potential applications in contact-free interactive displays.