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N. A. Bert
Researcher at Russian Academy of Sciences
Publications - 78
Citations - 1402
N. A. Bert is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Molecular beam epitaxy. The author has an hindex of 19, co-authored 75 publications receiving 1356 citations.
Papers
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Journal ArticleDOI
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
Victor M. Ustinov,Nikolay A. Maleev,A. E. Zhukov,A. R. Kovsh,A. Yu. Egorov,A. V. Lunev,B. V. Volovik,Igor Krestnikov,Yu. G. Musikhin,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Nikolai N. Ledentsov,Dieter Bimberg +13 more
TL;DR: In this article, the lateral size of InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases.
Journal ArticleDOI
Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing
A. O. Kosogov,Peter Werner,Ulrich Gösele,Nikolai N. Ledentsov,Dieter Bimberg,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,N. A. Bert,Zh. I. Alferov +10 more
TL;DR: In this article, annealing at higher temperature (700°C) of structures with two-dimensional and three-dimensional arrays in InAs-GaAs quantum dots (QDs) results in an increase in the size and in a corresponding decrease in the indium composition of the QDs.
Journal ArticleDOI
Photonic band gaps in 3D ordered fcc silica matrices
Vasily N. Astratov,Yurii A. Vlasov,O. Z. Karimov,A. A. Kaplyanskii,Yu G. Musikhin,N. A. Bert,V. N. Bogomolov,A. V. Prokofiev +7 more
TL;DR: In this article, the photonic band structure of 3D ordered silica matrices was studied by optical transmission measurements, and a decrease of the light attenuation length within the forbidden gap was observed after filling of the opal pores with CdS microcrystals.
Journal ArticleDOI
Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
A. F. Tsatsul’nikov,A. R. Kovsh,A. E. Zhukov,Yu. M. Shernyakov,Yu. G. Musikhin,V. M. Ustinov,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Alexander Mintairov,James L. Merz,N. N. Ledentsov,Dieter Bimberg +12 more
TL;DR: In this paper, the authors demonstrate an injection laser based on this kind of InAs-GaAs-AlAs overgrowth and demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs.
Journal ArticleDOI
Low-threshold injection lasers based on vertically coupled quantum dots
V. M. Ustinov,A. Yu. Egorov,A. R. Kovsh,A. E. Zhukov,Mikhail V. Maximov,A. F. Tsatsul’nikov,N. Yu. Gordeev,Sergey V. Zaitsev,Yu. M. Shernyakov,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Nikolay N. Ledentsov,J. Böhrer,Dieter Bimberg,A. O. Kosogov,Peter Werner,Ulrich Gösele +17 more
TL;DR: In this article, vertically coupled quantum dots (VECODs) are introduced in the active region of a GaAs-A1GaAs GRIN SCH laser for continuous wave operation.