Viktor Sverdlov

TL;DR: In this article, a model capturing the effect of general strain on the electron effective masses and band-edge energies of the lowest conduction band of silicon was developed, and analytical expressions for the effective mass change induced by shear strain and valley shifts/splittings were derived using a degenerate kldrp theory at the zone-boundary X point.

TL;DR: In this article, the authors argue that understanding the nature of the relaxation phase could hold the key to unraveling the underlying NBTI mechanism, and demonstrate the valuable consequences resulting therefrom.

TL;DR: In this paper, a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall motion MRAM, and spinorbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators), are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems

TL;DR: In this article, the authors carried out extensive numerical modeling of double-gate, nanoscale silicon n-metal oxide semiconductor field effect transistors (MOSFETs) with ultrathin, intrinsic channels connecting bulk, highly doped electrodes.

TL;DR: This paper discusses different memory technologies based on alternative principles of information storage, highlights the most promising candidates for future universal memory, and makes an overview of the current state-of-the-art of these technologies.