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Wei Jiang
Researcher at Chinese Academy of Sciences
Publications - 541
Citations - 14554
Wei Jiang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Micelle & Quantum dot. The author has an hindex of 53, co-authored 494 publications receiving 11455 citations. Previous affiliations of Wei Jiang include Paul Scherrer Institute & Sun Yat-sen University.
Papers
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Journal ArticleDOI
Disassembly of Multicompartment Polymer Micelles in Spatial Sequence Using an Electrostatic Field and Its Application for Release in Chronological Order.
Ming Wu,Yutian Zhu,Wei Jiang +2 more
TL;DR: Multicompartment micelles, comprising sequences of repeated elemental discoid parts connected by fasciculus, were formed by self-assembly of polystyrene-block- poly(2-vinyl pyridine)-block-poly(ethylene oxide) using an electrostatic field and can be disassembled through consequent release of small spherical micells.
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Brittle–ductile transition in PP/EPDM blends: effect of notch radius
Li Huang,Qingwu Pei,Qiang Yuan,Haidong Li,Fengmei Cheng,Jiachun Ma,Shengxiang Jiang,Lijia An,Wei Jiang +8 more
TL;DR: In this paper, the toughness of polypropylene (PP)/ethylene-propylene-diene monomer (EPDM) blends was studied over wide ranges of EPDM content and temperature.
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H2S-Responsive Lower Critical Solution Temperature of the Host–Guest Complex Based on Oxatub[4]arene with Tri(ethylene oxide) Moieties
TL;DR: The LCST behavior of the host-guest complex showed a response to the presence of the physiological gasotransmitter H2S through nitro group reduction.
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Monodisperse magnetite nanofluids: Synthesis, aggregation, and thermal conductivity
Wei Jiang,Liqiu Wang +1 more
TL;DR: In this article, the authors synthesize monodispersed magnetite (Fe3O4) in toluene with the particle size from 4 to 12 nm and obtain aqueous nanofluids by a simple one-step phase transfer.
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Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
TL;DR: In this paper, the optical and structural properties of InAs/GaAs QDs covered by InxGa1-xAs layer using transmission electron microscopy, photoluminescence (PL) spectra and atomic force microscopy were studied.