Showing papers by "Wen-Chang Chen published in 2013"

Non-halogenated solvents for environmentally friendly processing of high-performance bulk-heterojunction polymer solar cells

Abstract: High-performance bulk-heterojunction (BHJ) polymer solar cells (PSCs) processed from non-halogenated solvents with power conversion efficiency values over 7% are demonstrated for the first time. The effects of these solvents on the morphology, charge mobility, and PSC device performance have been systematically studied. The general applicability of these non-halogenated solvents to diverse polymer/fullerene systems has also been demonstrated.

High-Efficiency Polymer Solar Cells Achieved by Doping Plasmonic Metallic Nanoparticles into Dual Charge Selecting Interfacial Layers to Enhance Light Trapping

Abstract: Significantly increased power conversion efficiency (PCE) of polymer solar cells (PSCs) is achieved by applying a plasmonic enhanced light trapping strategy to a low bandgap conjugated polymer, poly(indacenodithiophene- co-phananthrene-quinoxaline) (PIDT-PhanQ) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) based bulk-heterojunction (BHJ) system. By doping both the rear and front charge-selecting interfacial layers of the device with different sizes of Au NPs, the PCE of the devices is improved from 6.65% to 7.50% (13% enhancement). A detailed study of processing, characterization, microscopy, and device fabrication is conducted to understand the underlying mechanism for the enhanced device performance. The success of this work provides a simple and generally applicable approach to enhance light harnessing of low bandgap polymers in PSCs.

Flexible Nonvolatile Transistor Memory Devices Based on One-Dimensional Electrospun P3HT:Au Hybrid Nanofibers

Abstract: A novel flexible nonvolatile flash transistor memory devices on polyethylene naphthalate (PEN) substrate using 1D electrospun nanofiber of poly(3-hexylthiophene) (P3HT):gold nanoparticles (Au NPs) hybrid as the channel is presented. The Au NPs are functionalized with self-assembled monolayer (SAM) of para-substituted amino (Au-NH2), methyl (Au-CH3) or trifluoromethyl (Au-CF3) tail groups on the benzenethiol moiety. They are employed as localized charge traps across the nanofiber channel and program/erase the device towards low conductance (OFF)/high conductance (ON) states under the applied electrical field. With the low operation voltage of ±5 V, the hybrid nanofiber transistor memories exhibit a 3.5–10.6 V threshold voltage shifting and at least 104 s data retention, with a minimum effect on ≈100 programmed/erased stress endurances. The dipoles of the SAM probably modify the work function of the Au NPs associated with the P3HT nanofiber channel and manifest the degree of negative threshold voltage shifting in an order of Au-NH2 > Au-CH3 > Au-CF3. The devices remain reliable and stable even under the bending conditions (radius: 5–30 mm) or 1000 repetitive bending cycles. The hybrid nanofiber can be used to obtain high-performance digital nanoscale memories for flexible high density data storage devices.

Multilevel nonvolatile transistor memories using a star-shaped poly((4-diphenylamino)benzyl methacrylate) gate electret

Abstract: Multilevel nonvolatile transistor memories were fabricated with inserted electret dielectric of star-shaped poly((4-diphenylamino)benzyl methacrylate). The devices could be controllably charged and retain the digital states even when the supply voltage was removed. The multilevel data storage characteristics by applying different gate voltages suggested novel ‘write-many-read-many memory’ behaviors.

Nonvolatile transistor memory devices using high dielectric constant polyimide electrets

Abstract: We report on the nonvolatile memory characteristics of pentacene-based organic field-effect transistors (OFETs) using polyimides, PI(6FDA-TPA-CN), PI(DSDA-TPA-CN), and PI(BTDA-TPA-CN), consisting of electron-donating 4,4′-diamino-4′′-cyanotriphenylamine (TPA-CN) and different electron-accepting dianhydrides as polymer electrets. The dielectric constants of PI(BTDA-TPA-CN), PI(DSDA-TPA-CN), and PI(6FDA-TPA-CN) are 3.44, 3.52, and 3.70, respectively, higher than those (∼3) of common polyimides. Among the polymer electrets, the OFET memory device based on PI(6FDA-TPA-CN) exhibits the highest OFET mobility of 0.5 cm2 V−1 s−1 due to the formation of a pentacene film of large grain size by the hydrophobic surface. The OFET memory devices with the configuration of n+Si/SiO2/PI/pentacene/Au show excellent nonvolatile memory behaviors for bistable switching. The stability for ON and OFF states can be maintained for 104 s with a Ion/Ioff current ratio of 104 for PI(6FDA-TPA-CN). Moreover, the higher dipole moment and larger torsion angle result in the more stable charge transfer complex, accompanied by the largest memory window of 84 V for the fabricated device. The write–read–erase–read (WRER) cycles can be operated over 100 cycles. The present study suggests that the high dielectric constant polyimide electrets with the enhanced capabilities for storing the charges have great potential applications for advanced OFET memory devices.

Tunable Electrical Memory Characteristics Using Polyimide:Polycyclic Aromatic Compound Blends on Flexible Substrates

Abstract: Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4′-diamino-4″-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronen...

Synthesis and Characterization of All-Conjugated Graft Copolymers Comprised of n-Type or p-Type Backbones and Poly(3-hexylthiophene) Side Chains

Abstract: All-conjugated graft copolymers containing poly(3-hexylthiophene) (P3HT) side chains and both of p-type and n-type backbones that are connected with all π-conjugated linkages were synthesized via a two-step method involving the Stille coupling reaction and Kumada catalyst-transfer polycondensation (KCTP). A series of naphthalene diimide copolymers with different compositions of 3-(4′-chloro-3′-tolyl)thiophene (CTT) units (PNDICTT) were designed as n-type backbones, while the poly(3-(4′-chloro-3′-tolyl)thiophene-alt-thiophene) (PCTT) was designed as a p-type backbone which were converted into n-type or p-type macroinitiators, and P3HT side chains were then in situ grafted from the macroinitiators via an externally initiated KCTP at room temperature. By using this newly developed two-step method for the synthesis of all-conjugated graft copolymers, the number of P3HT side chains in the graft copolymers can be simply controlled by varying the composition of the CTT units in PNDICTT. Meanwhile, the chain leng...

Diketopyrrolopyrrole-thiophene-based acceptor-donor-acceptor conjugated materials for high-performance field-effect transistors.

Abstract: We report the synthesis, morphology, and field-effect-transistor (FET) characteristics of new acceptor–donor–acceptor conjugated materials that consist of diketopyrrolopyrrole (DPP) acceptor groups and one of four different thiophene moieties, that is, dithiophene (2T), thieno[3,2-b]-thiophene (TT), dithieno[3,2-b:2′,3′-d]-thiophene (DTT), and 5,5′′′-di-(2-ethylhexyl)-[2,3′;5′,2′′;4′′,2′′′]quaterthiophene (4T). The optical band gaps of the as-prepared materials are smaller than 1.7 eV, which is attributed to the strong intramolecular charge transfer and the backbone coplanarity of the thiophene moieties. The order of both crystallinity and FET mobility (×10−2–×10−4 cm2 V−1 s−1) is TT2DPP>4T2DPP>2T2DPP>DTT2DP, which differ in the structure of the π-conjugated cores and core symmetry. Well-ordered intermolecular chain packing was confirmed by the GIXD and AFM results. In particular, the FET hole mobility of TT2DPP was further improved to 0.1 cm2 V−1 s−1, which was attributed to the well-interconnected structure through solution-shearing. These experimental results suggest the potential applications of the new DPPthiopheneDPP conjugated materials for organic electronic devices.

Electrospun Fibers as a Solid-State Real-Time Zinc Ion Sensor with High Sensitivity and Cell Medium Compatibility

Abstract: meso -2,6-Dichlorophenyltripyrrinone (TPN-Cl 2 ), a probe molecule for zinc II ions, is dispersed in a polymer host. The red fl uorescence peak at 620 nm appears when the molecule forms a complex with zinc at its center. TPNCl 2 has a high selectivity for zinc II and tolerates many common metal ions present in the human body. The probe molecules are blended with a hydrogel polymer, poly(2-hydroxyethyl methacrylate) (poly HEMA), with 30 wt% dimethylformamide (DMF). The fi ber structure with 1 μ m diameter is made by electrospinning in DMF solution of the probe and poly HEMA mixture. The fi brous fi lm detects zinc ions with concentrations as low as 10 − 6 M in real-time both in water and in the commonly used cell culture liquid media Dulbecco’s modifi ed Eagle medium (DMEM) and fetal bovine serum (FBS), which contain many metal ions and proteins. The time-resolution is 5 min for 10 − 6 M and 1 min for 10 − 5 M. This sensitivity and response speed satisfy the requirements for non-invasive biomedical studies.

Nonvolatile organic field effect transistor memory devices using one-dimensional aligned electrospun nanofiber channels of semiconducting polymers

Abstract: We report the nonvolatile memory characteristics of organic field effect transistors (OFETs) using one-dimensional aligned electrospun (ES) nanofibers of semiconducting poly(9,9-dioctyl-fluorene-co-bithiophene) (F8T2). The effects of the nanofiber diameter associated with the polymer chain orientation on the charge transport and storage ability were explored. The OFET devices using the F8T2 ES nanofibers exhibited a large average memory window of ∼30 V, an on–off ratio of 102–103 and a hole mobility of 10−4 to 10−2 cm2 V−1 s−1. The write, erase and read processes of the memory device were performed by voltages across the nanofiber channels for at least 100 cycles and could be stabilized for at least 1000 s. The reversible hysteresis characteristics were attributed to the shallow trapping in the ordered/disordered domains of the F8T2 nanofibers from the in situ grazing incidence wide angle X-ray scattering (GIWAXS) analysis. Our results suggest that the semiconducting ES nanofibers could have potential applications for high performance OFET-based nonvolatile organic memory devices.

Tunable electrical memory characteristics of brush copolymers bearing electron donor and acceptor moieties

Abstract: A series of brush copolymers bearing N-phenylcarbazole (PK) and 2-biphenyl-5-(4-ethoxyphenyl)-1,3,4-oxadiazole (BEOXD) moieties in various compositions were studied in detail, in particular their electrical memory characteristics, optical and electrical properties, morphological structures, and interfaces. Nanoscale thin films of the brush copolymers in devices were found to exhibit excellent unipolar electrical memory versatility, which can easily be tuned by tailoring the chemical composition and by changing the film thickness. Moreover, the molecular orbitals and band gap can be tuned by changing the chemical composition. The novel memory characteristics of these copolymers originate primarily from the cooperative roles of the ambipolar PK and BEOXD moieties, which have different charge trapping and stabilization properties. The electrical memory behaviors were found to occur via a favorable hole injection from the electrode and to be governed by trap-limited space-charge limited conduction combined with ohmic conduction and local filament formation. Overall, the brush copolymers are very suitable active materials for the low-cost mass production of high performance, polarity-free digital memory devices that can be operated with very low power consumption, high ON/OFF current ratios, and high stability.

Synthesis, Morphology, and Field-Effect Transistor Characteristics of Crystalline Diblock Copolymers Consisted of Poly(3-hexylthiophene) and Syndiotactic Polypropylene

Abstract: We report the synthesis, morphology, and the field effect transistor (FET) characteristics of the crystalline diblock copolymers of poly(3-hexylthiophene) and syndiotactic polypropylene (P3HT-b-sPP). Four diblock copolymers with various sPP block lengths, P3HT16K-b-sPP3K (P1), P3HT16K-b-sPP6K (P2), P3HT16K-b-sPP9K (P3), and P3HT16K-b-sPP14K (P4), were prepared by the click coupling of N3-capped sPP and ethynyl-capped P3HT. The stereoregular crystalline block sPP developed different types of molecular stacking structures and led the P3HT domains to pack lamellar edge-on structure with improved charge transporting characteristics, as evidenced by the grazing incidence wide-angle X-ray scattering (GIWAXS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The FET hole mobilities of P1–P3 thin films were 4.15 × 10–3, 4.16 × 10–2, and 3.95 × 10–3 cm2 V–1 s–1, respectively, which were up to 1 order of magnitude higher than that of the parent P3HT thin film (1.43 × 10–3 cm2 V–1 s–1). The...

Nonvolatile organic thin film transistor memory devices based on hybrid nanocomposites of semiconducting polymers: gold nanoparticles.

Abstract: We report the facile fabrication and characteristics of organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium. Electrical bias sweep/excitation effectively modulates the current response of hybrid memory devices through the charge transfer between F8T2 channel and functionalized Au NPs trapping sites. The electrical performance of the hybrid memory devices can be effectively controlled though the loading concentrations (0–9 %) of Au NPs and organic thiolate ligands on Au NP surfaces with different carbon chain lengths (Au-L6, Au-L10, and Au-L18). The memory window induced by voltage sweep is considerably increased by the high content of Au NPs or short carbon chain on the ligand. The hybrid nanocomposite of F8T2:9% Au-L6 provides the OTFT memories with a memory window of ∼41 V operated at ±30 V and memory rati...

Tunable Film Morphologies of Brush–Linear Diblock Copolymer Bearing Difluorene Moieties Yield a Variety of Digital Memory Properties

Abstract: An amphiphilic brush–linear diblock copolymer bearing a rigid difluorene moiety was synthesized, yielding a copolymer with a high thermal stability and excellent processability. The immiscibility of the blocks induced the formation of a variety of nanostructures, depending on the fabrication conditions, which differed significantly from the nanostructures observed among common diblock copolymers in similar composition. Interestingly, the orientations of the nanostructures could be controlled. The nanostructured polymer displayed a variety of tunable morphologies that yielded distinct electrical memory properties when incorporated as the active layer into a digital memory device. The memory devices could be operated under very low power consumption levels and displayed excellent unipolar switching properties.

Core–shell composite latexes derived from PEDOT:PSS dispersion and the preparation of conductive, flexible and transparent films

Abstract: In this study, a highly conductive poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) (PEDOT:PSS) dispersion served as a stabilizer for producing conductive PEDOT:PSS–poly(styrene-co-butyl acrylate) (PEDOT:PSS–P(St–BA)) composite latexes by emulsion polymerization. Furthermore, soft latex particles of poly(styrene-co-butyl acrylate), P(St–BA), were synthesized via emulsion polymerization and then mixed with the conductive PEDOT:PSS–P(St–BA), followed by casting on the substrate. After drying, conductive composite films with flexibility and transparency could be obtained. The particle size and morphology of PEDOT:PSS–P(St–BA) were observed by a scanning electron microscope. The film surface resistance, thickness, conductivity and transmittance of the composite films were measured and studied. Bending tests were also conducted to detect the flexibility. According to the results, the composite films showed high transmittance while possessing good conductivity and superior flexibility. The method may serve as a practical approach to fabricate conductive, flexible and transparent films.

Synthesis and Characterization of Iron Nanowires

Abstract: The iron nanowires can be fabricated via the process in which sodium borohydride reduces iron salts in external magnetic field. The iron nanowires are found to be covered by passivated layers of iron oxide which prevent the oxidation of iron nanowires. In this process, the boron will include in iron nanowires. The average length and diameter of iron nanowires is around 1.2 micrometers and 60 nanometers, respectively. According to ICP results, the contents of B and Fe are about 1.98 wt% and 87.04 wt%, respectively, in iron nanowires. A wide variety of equipment is used to investigate the morphological, microchemical, and structural characteristics of the newly synthesized iron nanowires ––– e.g., XRD, FE-SEM, HR-TEM, VSM and XANES. XANES analysis indicates the boron in iron nanowires exists in the form of B2O3. The saturation magnetization and the coercive force of iron nanowires are 157.93 emu/g and 9.74 Oe, respectively. In-situ images of synthesized iron nanowires during reduction process in magnetic field are observed by NSRRC transmission X-ray microscope. Thus, this study develop a novel process to produce iron nanowires with large quantitates and can control its length and diameter by various the concentration of precursors for various applications.

Donor-acceptor oligoimides for application in high-performance electrical memory devices.

Abstract: Two new oligoimides, OI(APAP-6FDA) and OI(APAN-6FDA), which consisted of electron-donating N-(4-aminophenyl)-N-phenyl-1-aminopyrene (APAP) or N-(4-aminophenyl)-N-phenyl-1-aminonaphthalene (APAN) moieties and electron-accepting 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) moieties, were designed and synthesized for application in electrical memory devices. Such devices, with the indium tin oxide (ITO)/oligoimide/Al configuration, showed memory characteristics, from high-conductance Ohmic current flow to negative differential resistance (NDR), with corresponding film thicknesses of 38 and 48 nm, respectively. The 48 nm oligoimide film device exhibited NDR electrical behavior, which resulted from the diffusion of Al atoms into the oligoimide layer. On further increasing the film thickness to 85 nm, the OI(APAP-6FDA) film device showed a reproducible nonvolatile “write once read many” (WORM) property with a high ON/OFF current ratio (more than ×10(4)). On the other hand, the device that was based on the 85 nm OI(APAN-6FDA) film exhibited a volatile static random access memory (SRAM) property. The longer conjugation length of the pyrene unit compared to that of a naphthalene unit was considered to be responsible for the different memory characteristics between these two oligoimides. These experimental results suggested that tunable switching behavior could be achieved through an appropriate design of the donor–acceptor oligoimide structure and controllable thickness of the active memory layer.

Effects of the acceptor conjugation length and composition on the electrical memory characteristics of random copolyimides

Abstract: Resistive-switching memories based on copolyimides (coPIs), PI-NTCDIX and PI-BTCDIX, with different compositions of 4,4′-diamino-4″-methyltriphenylamine (AMTPA), 4,4′-(hexafluoroisopropylidene)diphthalic anhydride, and N,N′-bis-(4-aminophenyl)-1,8:4,5-naphthalenetetracarboxydiimide (NTCDI) or N,N′-bis-(4-aminophenyl)-1,2:4,5-benzenetetracarboxydiimide (BTCDI) have been developed. By varying the feed ratio of monomers, PI-NTCDIX and PI-BTCDIX showed tunable optical and electronic properties through the charge transfer (CT) between AMTPA and NTCDI or BTCDI. The memory devices based on PI-NTCDIX exhibited the tunable electrical bistability from the volatile dynamic random access memory to nonvolatile write once read many memory characteristics as the NTCDI composition increased. The OFF/ON electrical switching transition was mainly attributed to the CT mechanism for the charge separated high conductance, based on the analysis of model compounds and density functional theory calculation. Also, the volatility of the memory device depended on the stability of CT complex. The long conjugation and high electron affinity of the NTCDI moiety stabilized the radical anion generated in the CT complex and prevented the recombination of segregated radical species even through applying the high positive or negative voltage. On the other hand, the memory devices based on PI-BTCDIX showed a rather unique behavior compared with those based on PI-NTCDIX. At the low BTCDI composition, the device exhibited volatile memory property. However, no switching behavior was observed at the high BTCDI composition due to the low highest occupied molecular orbital energy level of BTCDI. Combining these results and our previous study on perylenebisimide (PBI), we concluded that memory characteristics could be tailored by changing the conjugation length (PBI > NTCDI > BTCDI) and the acceptor composition in random coPIs. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013

Interplay between the Phase Transitions at Different Length Scales in the Supramolecular Comb–Coil Block Copolymers Bearing (AB)n Multiblock Architecture

Abstract: We introduced the concept of comb–coil supramolecule into linear (AB)n-type multiblock copolymer and investigated the self-assembly behavior of the copolymers as a function of the unit number n. Linear (polystyrene-block-poly(2-vinylpyridine))n (denoted as (PS-b-P2VP)n, where n = 1, 2, 3) was complexed with a surfactant, dodecylbenzenesulfonic acid (DBSA), to yield the comb–coil multiblock copolymers, in which DBSA bound stoichiometrically with P2VP block via physical bonds. All three comb–coil block copolymers, including diblock (n = 1), tetrablock (n = 2), and hexablock (n = 3), self-organized to form cylinder-within-lamellae morphology at the lower temperature, where the cylindrical microdomains formed by the PS block embedded in the matrix composed of the lamellar mesophase organized by the P2VP(DBSA) comb block. The disordering of the smaller-scale lamellar mesophase formed by the comb block occurred upon heating; at the same time, the larger-scale cylindrical domains transformed to body-centered cub...

Synthesis of New Thiadiazole-Containing Polythiophene Derivatives and Their Application to Organic Solar Cells

Abstract: Department of Organic and Polymeric Materials, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, H-120, Meguro-ku, Tokyo 152-8550, Japan; PRESTO, Japan Science and Technology Agency (JST), 4-1-8, Honcho, Kawaguchi, Saitama 332-0012, Japan; Deprtment of Chemical Engineering, National Taiwan University, Taipei, Taiwan 10617 thigashihara@yz.yamagata-u.ac.jp

Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors

Abstract: For the development of radiation-hard Si detectors for the SiD BeamCal (Si Detector Beam Calorimeter) program for International Linear Collider (ILC), n -type Magnetic Czochralski Si detectors have been irradiated first by fast neutrons to fluences of 1.5×10 14 and 3×10 14 n eq /cm 2 , and then by gamma up to 500 Mrad. The motivation of this mixed radiation project is to test the radiation hardness of MCZ detectors that may utilize the gamma/electron radiation to compensate the negative effects caused by neutron irradiation, all of which exists in the ILC radiation environment. By using the positive space charge created by gamma radiation in MCZ Si detectors, one can cancel the negative space charge created by neutrons, thus reducing the overall net space charge density and therefore the full depletion voltage of the detector. It has been found that gamma radiation has suppressed the room temperature reverse annealing in neutron-irradiated detectors during the 5.5 month of time needed to reach a radiation dose of 500 Mrad. The room temperature annealing (RTA) was verified in control samples (irradiated to the same neutron fluences, but going through this 5.5 month RTA without gamma radiation). This suppression is in agreement with our previous predictions, since negative space charge generated during the reverse annealing was suppressed by positive space charge induced by gamma radiation. The effect is that regardless of the received neutron fluence the reverse annealing is totally suppressed by the same dose of gamma rays (500 Mrad). It has been found that the full depletion voltage for the two detectors irradiated to two different neutron fluences stays the same before and after gamma radiation. Meanwhile, for the control samples also irradiated to two different neutron fluences, full depletion voltages have gone up during this period. The increase in full depletion voltage in the control samples corresponds to the generation of negative space charge, and this increase in concentration of negative space charge goes up with the neutron fluence. If we assume the reverse annealing is also taking place for the two gamma-irradiated samples with similarly different concentrations of negative space charge generated, the observed effect of no changes in space charge (no changes in V fd ) in these two gamma-irradiated samples would imply that concentrations of positive space charge created in these two control samples are different at the same gamma dose, and gamma irradiation effectively “switched off”, the RT (room temperature) reverse annealing of neutron irradiation. It has also been found that as soon as the gamma irradiation stops, the RT reverse annealing of neutron irradiation-induced defects resumes with same rate as that of the control detectors. This behavior in mixed radiation samples (neutron plus gamma) would suggest some nonlinear effect (defects induced by mixed-radiations are not additive of those by individual radiation alone), or interaction of radiation induced acceptor-type and donor-type defects.

Polyimidothioethers-inorganic nanoparticle hybrid material, intermediate thereof and their preparation

Abstract: The present invention relates to novel polyimidothioethers-inorganic nanoparticle hybrid material, which exhibit good surface planarity, thermal dimensional stability, tunable refractive index, and high optical transparency upon forming into films. The present invention also relates to polyimidothioethers which is an intermediate for preparing the present hybrid material, and their preparation.