Journal ArticleDOI
Tunable Electrical Memory Characteristics Using Polyimide:Polycyclic Aromatic Compound Blends on Flexible Substrates
An-Dih Yu,Tadanori Kurosawa,Ying-Hsuan Chou,Koutarou Aoyagi,Yu Shoji,Tomoya Higashihara,Mitsuru Ueda,Cheng-Liang Liu,Wen-Chang Chen +8 more
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TLDR
Tunable memory performances of the developed PI/polycyclic aromatic compound blends are advantageous for future advanced memory device applications.Abstract:
Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4′-diamino-4″-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronen...read more
Citations
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Journal ArticleDOI
Polymer‐Based Resistive Memory Materials and Devices
TL;DR: This review introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer-based resistive memory devices.
Journal ArticleDOI
Organic and hybrid resistive switching materials and devices
TL;DR: This review presents a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance.
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Polymer memristor for information storage and neuromorphic applications
TL;DR: The digital-type polymer memristor behaves as resistive random access memory with non-volatility, high density, more speed, low power consumption, large ON/OFF ratio, high endurance and long retention, and is recognized as an appealing candidate for the next generation "universal memory".
Journal ArticleDOI
Polyimides containing aliphatic/alicyclic segments in the main chains
TL;DR: In this paper, a review of the available aliphatic/alicyclic monomers and their potential applications is presented, along with the outlook for the future of polyimides and their advanced applications.
Journal ArticleDOI
Room-Temperature Processed Nb2O5 as the Electron-Transporting Layer for Efficient Planar Perovskite Solar Cells
Xufeng Ling,Jianyu Yuan,Dongyang Liu,Yongjie Wang,Yannan Zhang,Si Chen,Haihua Wu,Feng Jin,Fu-Peng Wu,Guozheng Shi,Xun Tang,Jiawei Zheng,Shengzhong Frank Liu,Zhike Liu,Wanli Ma +14 more
TL;DR: Benefitting from the low-temperature process, flexible PSCs based on a-Nb2O5, with a considerable PCE of 12.1%, suggest a great potential for its application in optoelectrical devices.
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Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices
TL;DR: In this paper, a review of electrically bistable memory devices developed in our laboratory is presented, as well as the research by other laboratories is reviewed as well, including those developed in other laboratories.
Journal ArticleDOI
Polymer and Organic Nonvolatile Memory Devices
TL;DR: In this article, the role of π-conjugated materials in the operation of nonvolatile memory devices is reviewed and a review of the state of the art with respect to these target specifications is presented.