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Werner Pamler
Researcher at Infineon Technologies
Publications - 58
Citations - 898
Werner Pamler is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Layer (electronics) & Substrate (printing). The author has an hindex of 10, co-authored 58 publications receiving 857 citations. Previous affiliations of Werner Pamler include Technische Universität München & Siemens.
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Journal ArticleDOI
Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts
Walter M. Weber,Lutz Geelhaar,A. P. Graham,Eugen Unger,Georg S. Duesberg,Maik Liebau,Werner Pamler,Caroline Chèze,Henning Riechert,Paolo Lugli,Franz Kreupl +10 more
TL;DR: Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths, and the transistors displayed p-type behaviour, sustained current densities, and on/off current ratios.
Journal ArticleDOI
How do carbon nanotubes fit into the semiconductor roadmap
Andrew Graham,Georg S. Duesberg,Wolfgang Hoenlein,Franz Kreupl,Maik Liebau,R. Martin,B. Rajasekharan,Werner Pamler,Robert Seidel,Werner Steinhoegl,Eugen Unger +10 more
TL;DR: In this paper, the authors present an overview of the issues related to the integration of carbon nanotubes into microelectronics systems and discuss the problems associated with the construction of nanotube-based devices.
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Three dimensional metallization for vertically integrated circuits
D. Bollmann,R. Braun,R. Buchner,U. Cao-Minh,Manfred Engelhardt,G. Errmann,T. Grassl,K. Hieber,H. Hübner,G. Kawala,M.B. Kleiner,Armin Klumpp,S.A. Kuhn,Christof Landesberger,H. Lezec,W. Muth,Werner Pamler,R. Popp,E. Renner,G. Ruhl,A. Sanger,U. Scheler,C. Schmidt,Siegfried Dr. Rer. Nat. Schwarzl,Josef Weber,Werner Weber,Peter Ramm +26 more
TL;DR: In this article, the authors realized a three dimensional metallization for vertically integrated circuits (VIC) using a newly developed technology that allows stacking and vertical interchip wiring of completely processed and electrically tested wafers using available microelectronic processes.
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Carbon Nanotubes for Microelectronics
Andrew Graham,Georg S. Duesberg,Robert Seidel,Maik Liebau,Eugen Unger,Werner Pamler,Franz Kreupl,Wolfgang Hoenlein +7 more
TL;DR: Despite all prophecies of its end, silicon-based microelectronics still follows Moore's Law and continues to develop rapidly, but the inherent physical limits will eventually be reached.
Journal ArticleDOI
Application of auger ewlectron depth profile analysis to thin film interdiffusion studies
TL;DR: In this paper, two types of thin-film systems are presented in order to determine diffusion coefficients from depth profiles: double-layer and periodic multi-layer film structures, which have the advantage of less stringent requirements on depth resolution and allows to detect smaller diffusion effects.