Cree Inc.

About: Cree Inc. is a company organization based out in Shenzhen, China. It is known for research contribution in the topics: Layer (electronics) & Silicon carbide. The organization has 1014 authors who have published 2436 publications receiving 64884 citations.

Group iii nitride light emitting devices with gallium-free layers

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETs

Abstract: Power MOSFETs in 4H-SiC are very attractive for high voltage switching applications because of their low specific on-resistances and fast, temperature independent switching characteristics. We present our latest results in 10 kV 4H-SiC DMOSFET development - a specific on-resistance of 123 m/spl Omega//spl middot/cm/sup 2/ is demonstrated, which is a 42% reduction in specific on-resistance. This is the lowest specific on-resistance value ever reported for 10 kV class majority carrier switches.

Solid state light emitting devices including adjustable scotopic / photopic ratio

Abstract: Solid state light emitting devices include multiple LED components separately arranged to generate spectral output having different ratios of scotopic to photopic light (S/P ratios) but similar chromaticities preferably within seven MacAdam ellipses. A light emitting device may be controlled to permit transitioning between different modes of operation of multiple LED components, with aggregated output of different modes having different S/P ratios but similar chromaticities. Multiple LED components of a light emitting device may be simultaneously controlled with different dimming profiles to effect increased color rendering at maximum emissive output of the apparatus, and to effect increased aggregated S/P ratio at minimum emissive output of the device.

Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies

Abstract: High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. The total width of the HEMT is less than about 6.0 mm.

Method of obtaining high quality silicon dioxide passivation on silicon carbide

Abstract: of EP0637069A method of obtaining high quality passivation layers on silicon carbide surfaces by oxidizing a sacrificial layer of a silicon-containing material on a silicon carbide portion of a device structure to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants that would otherwise degrade the electrical integrity of the oxide layer. The oxidizing of the sacrificial layer is preferably achieved by thermal oxidizing. The silicon carbide portion may be of p-type silicon carbide which is aluminium doped.