Cree Inc.

About: Cree Inc. is a company organization based out in Shenzhen, China. It is known for research contribution in the topics: Layer (electronics) & Silicon carbide. The organization has 1014 authors who have published 2436 publications receiving 64884 citations.

Low voltage diode with reduced parasitic resistance and method for fabricating

Abstract: A method of making a diode begins by depositing an AlxGa1-xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer (112), an n- GaN layer (110), an AlxGa1-xN barrier layer (108), and an SiO2 dielectric layer. A portion of the dielectric layer is removed and a Schottky metal (106) deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au-Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n-, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal (106); and an ohmic (114) contact is deposited on the n+ layer (112).

Optical waveguide assembly and light engine including same

Abstract: An optical waveguide assembly includes a plurality of separate body sections each having a coupling cavity for receiving an LED element and a light extraction feature spaced from the coupling cavity, and a mounting structure surrounding the plurality of body sections that maintains the plurality of body sections in assembled relationship. The waveguide assembly may be incorporated into a light engine.

Light emitting diode (led) lighting systems including low absorption, controlled reflectance and diffusion layers

Abstract: LED lighting systems include an enclosure adjacent at least one LED that is configured so that at least some light that is emitted by the at least one LED passes through the enclosure. The enclosure also has a transmittance-to-reflectance ratio that is configured to homogenize light that emerges from the enclosure (1) directly from the at least one LED, and (2) after one or more reflections within the enclosure. LED lighting systems also include LEDs of at least two different colors, a reflective layer and a diffusion layer. The reflective layer has a transmittance-to-reflectance ratio that is configured to homogenize intensity of the light emitted from the LEDs. The diffusion layer is configured to homogenize color uniformity of the light.

Light emitting diodes including integrated backside reflector and die attach

Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.

Semiconductor devices including implanted regions and protective layers

Abstract: A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer.