Cree Inc.

About: Cree Inc. is a company organization based out in Shenzhen, China. It is known for research contribution in the topics: Layer (electronics) & Silicon carbide. The organization has 1014 authors who have published 2436 publications receiving 64884 citations.

Systems and methods for laser backlighting of liquid crystal displays

Abstract: An LCD display includes a planar array of transmissive liquid crystal display (LCD) devices, and at least one laser diode device spaced apart from the planar array of LCD devices and configured to illuminate at least a subset of the LCD devices of the planar array of LCD devices such that, in operation, the laser diode device provides backlighting for the subset of LCD devices of the planar array of LCD devices.

Power bipolar devices based on silicon carbide

Abstract: High-voltage 4H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors, and thyristors are discussed. The results of experimental and theoretical studies of the steady-state and transient characteristics of these devices are presented. Specific features of device operation, related to the specific electronic properties of silicon carbide and SiC-based p-n structures, are analyzed.

Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices

Abstract: An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation, an active region in the device, an edge termination passivation for the active region, in which the edge termination passivation includes, an oxide layer on at least some of the silicon carbide portions of the device for satisfying surface states and lowering interface density, a non-stoichiometric layer of silicon nitride on the oxide layer for avoiding the incorporation of hydrogen and for reducing parasitic capacitance and minimizing trapping, and, a stoichiometric layer of silicon nitride on the nonstoichiometric layer for encapsulating the. nonstoichiometric layer and the oxide layer.

Light fixture with co-formed plenum component

Abstract: A light fixture with co-formed plenum component is disclosed. Embodiments of the invention provide troffer-style recessed solid state fixture using a highly reflective plastic reflector. In at least some embodiments, the plastic reflector can meet the additional requirements placed on mechanical components exposed to the space above the ceiling plane in plenum return ceiling applications. Example embodiments include a light fixture with an LED light source and a reflector that is coextruded from a plenum rated substrate and a reflective material, for example, a plenum rated plastic substrate and a diffuse, white reflective material. In some embodiments, the plenum rated substrate includes polyetherimide, a polyphenylene ether/polystyrene blend, polycarbonate, polycarbonate copolymer, or a combination of the foregoing.

Lighting device providing improved color rendering

Abstract: The present disclosure relates to lighting device configurations with high color rendering by using groups of BSY or BSG LEDs (52X) which light is controlled (80) and combined with the light from red LEDs (52R) so as to obtain a white light on the black body locus of the 1931 CIE chromaticity diagram.