Indian Institute of Technology Madras

About: Indian Institute of Technology Madras is a facility organization based out in Chennai, Tamil Nadu, India. It is known for research contribution in the topics: Catalysis & Heat transfer. The organization has 20118 authors who have published 36499 publications receiving 590447 citations.

Binary Black Hole Population Properties Inferred from the First and Second Observing Runs of Advanced LIGO and Advanced Virgo

Abstract: We present results on the mass, spin, and redshift distributions with phenomenological population models using the 10 binary black hole (BBH) mergers detected in the first and second observing runs completed by Advanced LIGO and Advanced Virgo. We constrain properties of the BBH mass spectrum using models with a range of parameterizations of the BBH mass and spin distributions. We find that the mass distribution of the more massive BH in such binaries is well approximated by models with no more than 1% of BHs more massive than 45 M and a power-law index of (90% credibility). We also show that BBHs are unlikely to be composed of BHs with large spins aligned to the orbital angular momentum. Modeling the evolution of the BBH merger rate with redshift, we show that it is flat or increasing with redshift with 93% probability. Marginalizing over uncertainties in the BBH population, we find robust estimates of the BBH merger rate density of R= (90% credibility). As the BBH catalog grows in future observing runs, we expect that uncertainties in the population model parameters will shrink, potentially providing insights into the formation of BHs via supernovae, binary interactions of massive stars, stellar cluster dynamics, and the formation history of BHs across cosmic time.

Identification of heavy-flavour jets with the CMS detector in pp collisions at 13 TeV

Abstract: Many measurements and searches for physics beyond the standard model at the LHC rely on the efficient identification of heavy-flavour jets, i.e. jets originating from bottom or charm quarks. In this paper, the discriminating variables and the algorithms used for heavy-flavour jet identification during the first years of operation of the CMS experiment in proton-proton collisions at a centre-of-mass energy of 13 TeV, are presented. Heavy-flavour jet identification algorithms have been improved compared to those used previously at centre-of-mass energies of 7 and 8 TeV. For jets with transverse momenta in the range expected in simulated events, these new developments result in an efficiency of 68% for the correct identification of a b jet for a probability of 1% of misidentifying a light-flavour jet. The improvement in relative efficiency at this misidentification probability is about 15%, compared to previous CMS algorithms. In addition, for the first time algorithms have been developed to identify jets containing two b hadrons in Lorentz-boosted event topologies, as well as to tag c jets. The large data sample recorded in 2016 at a centre-of-mass energy of 13 TeV has also allowed the development of new methods to measure the efficiency and misidentification probability of heavy-flavour jet identification algorithms. The b jet identification efficiency is measured with a precision of a few per cent at moderate jet transverse momenta (between 30 and 300 GeV) and about 5% at the highest jet transverse momenta (between 500 and 1000 GeV).

Combined measurements of Higgs boson couplings in proton–proton collisions at √s=13Te

Abstract: Combined measurements of the production and decay rates of the Higgs boson, as well as its couplings to vector bosons and fermions, are presented. The analysis uses the LHC proton–proton collision data set recorded with the CMS detector in 2016 at $\sqrt{s}=13\,\text {Te}\text {V} $ , corresponding to an integrated luminosity of 35.9 ${\,\text {fb}^{-1}} $ . The combination is based on analyses targeting the five main Higgs boson production mechanisms (gluon fusion, vector boson fusion, and associated production with a $\mathrm {W}$ or $\mathrm {Z}$ boson, or a top quark-antiquark pair) and the following decay modes: $\mathrm {H} \rightarrow \gamma \gamma $ , $\mathrm {Z}\mathrm {Z}$ , $\mathrm {W}\mathrm {W}$ , $\mathrm {\tau }\mathrm {\tau }$ , $\mathrm {b} \mathrm {b} $ , and $\mathrm {\mu }\mathrm {\mu }$ . Searches for invisible Higgs boson decays are also considered. The best-fit ratio of the signal yield to the standard model expectation is measured to be $\mu =1.17\pm 0.10$ , assuming a Higgs boson mass of $125.09\,\text {Ge}\text {V} $ . Additional results are given for various assumptions on the scaling behavior of the production and decay modes, including generic parametrizations based on ratios of cross sections and branching fractions or couplings. The results are compatible with the standard model predictions in all parametrizations considered. In addition, constraints are placed on various two Higgs doublet models.

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Abstract: We investigate the breakdown (V/sub br/) enhancement potential of the field plate (FP) technique in the context of AlGaN/GaN power HEMTs. A comprehensive account of the critical geometrical and material variables controlling the field distribution under the FP is provided. A systematic procedure is given for designing a FP device, using two-dimensional (2-D) simulation, to obtain the maximum V/sub br/, with minimum degradation in on-resistance and frequency response. It is found that significantly higher V/sub br/ can be achieved by raising the dielectric constant (/spl epsi//sub i/) of the insulator beneath the FP. Simulation gave the following estimates. The FP can improve the V/sub br/ by a factor of 2.8-5.1, depending on the 2-DEG concentration (n/sub s/) and /spl epsi//sub i/. For n/sub s/=1/spl times/10/sup 13//cm/sup 2/, the V/sub br/ can be raised from 123 V to 630 V, using a 2.2 /spl mu/m FP on a 0.8 /spl mu/m silicon nitride, and 4.7 /spl mu/m gate-drain separation. The methodology of this paper can be extended to the design of FP structures in other lateral FETs, such as MESFETs and LD-MOSFETs.