Indian Institute of Technology Madras

About: Indian Institute of Technology Madras is a facility organization based out in Chennai, Tamil Nadu, India. It is known for research contribution in the topics: Catalysis & Heat transfer. The organization has 20118 authors who have published 36499 publications receiving 590447 citations.

Data reconciliation & gross error detection: an intelligent use of process data

Abstract: Introduction. Measurement Errors and Error Reduction Techniques. Steady State Data Reconciliation for Bilinear Systems. Nonlinear Steady State Data Reconciliation. Data Reconciliation in Dynamic Systems. Introduction to Gross Error Detection. Multiple Gross Error Identification Strategies for Steady State Processes. Gross Error Detection in Dynamic Processes. Design of Sensor Networks. Industrial Applications of Data Reconciliation and Gross Error Detection Technologies. Appendix A: Basic concepts of linear algebra. Appendix B: Basic concepts of Graph Theory. Appendix C: Statistical Hypotheses Testing.

Charged-particle nuclear modification factors in PbPb and pPb collisions at √sNN=5.02 TeV

Abstract: we acknowledge the enduring support for the construction and operation of the LHC and the CMS detector provided by the following funding agencies: BMWFW and FWF (Austria); FNRS and FWO (Belgium); CNPq, CAPES, FAPERJ, and FAPESP (Brazil); MES (Bulgaria); CERN; CAS, MoST, and NSFC (China); COLCIENCIAS (Colombia); MSES and CSF (Croatia); RPF (Cyprus); SENESCYT (Ecuador); MoER, ERC IUT and ERDF (Estonia); Academy of Finland, MEC, and HIP (Finland); CEA and CNRS/IN2P3 (France); BMBF, DFG, and HGF (Germany); GSRT (Greece); OTKA and NIH (Hungary); DAE and DST (India); IPM (Iran); SFI (Ireland); INFN (Italy); MSIP and NRF (Republic of Korea); LAS (Lithuania); MOE and UM (Malaysia); BUAP, CINVESTAV, CONACYT, LNS, SEP, and UASLP-FAI (Mexico); MBIE (New Zealand); PAEC (Pakistan); MSHE and NSC (Poland); FCT (Portugal); JINR (Dubna); MON, RosAtom, RAS and RFBR (Russia); MESTD (Serbia); SEIDI and CPAN (Spain); Swiss Funding Agencies (Switzerland); MST (Taipei); ThEPCenter, IPST, STAR and NSTDA (Thailand); TUBITAK and TAEK (Turkey); NASU and SFFR (Ukraine); STFC (United Kingdom); DOE and NSF (U.S.A.).

Measurements of properties of the Higgs boson decaying into the four-lepton final state in pp collisions at √s=13 TeV

Abstract: Properties of the Higgs boson are measured in the H → ZZ → 4l (l = e, μ) decay channel. A data sample of proton-proton collisions at $ \sqrt{s}=13 $ TeV, collected with the CMS detector at the LHC and corresponding to an integrated luminosity of 35.9 fb$^{−1}$ is used. The signal strength modifier μ, defined as the ratio of the observed Higgs boson rate in the H → ZZ → 4l decay channel to the standard model expectation, is measured to be μ = 1.05$_{− 0.17}^{+ 0.19}$ at m$_{H}$ = 125.09 GeV, the combined ATLAS and CMS measurement of the Higgs boson mass. The signal strength modifiers for the individual Higgs boson production modes are also measured. The cross section in the fiducial phase space defined by the requirements on lepton kinematics and event topology is measured to be 2. 92$_{− 0.44}^{+ 0.48}$ (stat)$_{− 0.24}^{+ 0.28}$ (syst)fb, which is compatible with the standard model prediction of 2.76 ± 0.14 fb. Differential cross sections are reported as a function of the transverse momentum of the Higgs boson, the number of associated jets, and the transverse momentum of the leading associated jet. The Higgs boson mass is measured to be m$_{H}$ = 125.26 ± 0.21 GeV and the width is constrained using the on-shell invariant mass distribution to be Γ$_{H}$ < 1.10 GeV, at 95% confidence level.

The 2016 oxide electronic materials and oxide interfaces roadmap

Abstract: Oxide electronic materials provide a plethora of possible applications and offer ample opportunity for scientists to probe into some of the exciting and intriguing phenomena exhibited by oxide systems and oxide interfaces. In addition to the already diverse spectrum of properties, the nanoscale form of oxides provides a new dimension of hitherto unknown phenomena due to the increased surface-to-volume ratio. Oxide electronic materials are becoming increasingly important in a wide range of applications including transparent electronics, optoelectronics, magnetoelectronics, photonics, spintronics, thermoelectrics, piezoelectrics, power harvesting, hydrogen storage and environmental waste management. Synthesis and fabrication of these materials, as well as processing into particular device structures to suit a specific application is still a challenge. Further, characterization of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap on 'oxide electronic materials and oxide interfaces'. This roadmap envisages the potential applications of oxide materials in cutting edge technologies and focuses on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide-based devices. The contents of this roadmap will highlight the functional and correlated properties of oxides in bulk, nano, thin film, multilayer and heterostructure forms, as well as the theoretical considerations behind both present and future applications in many technologically important areas as pointed out by Venkatesan. The contributions in this roadmap span several thematic groups which are represented by the following authors: novel field effect transistors and bipolar devices by Fortunato, Grundmann, Boschker, Rao, and Rogers; energy conversion and saving by Zaban, Weidenkaff, and Murakami; new opportunities of photonics by Fompeyrine, and Zuniga-Perez; multiferroic materials including novel phenomena by Ramesh, Spaldin, Mertig, Lorenz, Srinivasan, and Prellier; and concepts for topological oxide electronics by Kawasaki, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action 'towards oxide-based electronics' which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies. In summary, we do hope that this oxide roadmap appears as an interesting up-to-date snapshot on one of the most exciting and active areas of solid state physics, materials science, and chemistry, which even after many years of very successful development shows in short intervals novel insights and achievements.